The electronic structure of the InAs(110) surface is investigated using several theoretical tools: semiempirical tightbinding, density functional theory, and perturbative many-body theory within the GW approximation. Comparison is made with available photoemission data. Moreover, we calculate the optical properties of this surface and perform reflectance anisotropy experiments. The tight-binding and especially the GW approximations provide a very good description of the optical spectra and allow for a more detailed analysis of the origin of the spectral features.
X. Lopez Lozano, X., Pulci, O., Noguez, C., Fleischer, K., DEL SOLE, R., Richter, W. (2005). Electronic structure and reflectance anisotropy spectrum of InAs(110). PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 71(12) [10.1103/PhysRevB.71.125337].
Electronic structure and reflectance anisotropy spectrum of InAs(110)
PULCI, OLIVIA;DEL SOLE, RODOLFO;
2005-01-01
Abstract
The electronic structure of the InAs(110) surface is investigated using several theoretical tools: semiempirical tightbinding, density functional theory, and perturbative many-body theory within the GW approximation. Comparison is made with available photoemission data. Moreover, we calculate the optical properties of this surface and perform reflectance anisotropy experiments. The tight-binding and especially the GW approximations provide a very good description of the optical spectra and allow for a more detailed analysis of the origin of the spectral features.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
