We report an ab initio investigation of fast electron energy-loss probability in silicon and germanium nanowires. Computed energy loss spectra are characterized by a strong enhancement of the direct interband transition peak at low energy, in good agreement with experimental data. Our calculations predict an important diameter dependence of the bulk volume plasmon peak for very thin wires which is consistent with the blue shift observed experimentally in thicker wires.

Palummo, M., Hogan, C., Ossicini, S. (2015). Ab initio energy loss spectra of Si and Ge nanowires. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 17(43), 29085-29089 [10.1039/c5cp05074j].

Ab initio energy loss spectra of Si and Ge nanowires

PALUMMO, MAURIZIA;
2015-01-01

Abstract

We report an ab initio investigation of fast electron energy-loss probability in silicon and germanium nanowires. Computed energy loss spectra are characterized by a strong enhancement of the direct interband transition peak at low energy, in good agreement with experimental data. Our calculations predict an important diameter dependence of the bulk volume plasmon peak for very thin wires which is consistent with the blue shift observed experimentally in thicker wires.
2015
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/03 - FISICA DELLA MATERIA
English
Palummo, M., Hogan, C., Ossicini, S. (2015). Ab initio energy loss spectra of Si and Ge nanowires. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 17(43), 29085-29089 [10.1039/c5cp05074j].
Palummo, M; Hogan, C; Ossicini, S
Articolo su rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/170969
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