Several key topics in THz electronics are discussed. We describe the operating principles, limitations, and state-of-the-art of resonant-tunnelling diodes (RTDs) and THz RTD oscillators. Furthermore, THz fundamental or sub-harmonic flip-chip Schottky diode mixer configurations are described. Different measurement techniques are commented and their properties are outlined. The chapter also relates the use of advanced mixer configurations. Fabrication technologies for Schottky-diode based structures for THz wave applications are included together with the low-barrier Schottky diode characterization for millimeter-wave detector design. Finally, LNAs for sub-millimeter waves are discussed, including up-to-date design approaches and resulting performance, with emphasis on the necessary technological modification to extend MMIC approaches toward the THz region.

Feiginov, M., Gonzalo, R., Maestrojuán, I., Cojocari, O., Hoefle, M., Limiti, E. (2015). THz Electronics. In L.E.G.M. Guillermo Carpintero (a cura di), Semiconductor Terahertz Technology: Devices and Systems at Room Temperature Operation (pp. 254-303). John Wiley & Sons, Ltd [10.1002/9781118920411.ch6].

THz Electronics

LIMITI, ERNESTO
2015-01-01

Abstract

Several key topics in THz electronics are discussed. We describe the operating principles, limitations, and state-of-the-art of resonant-tunnelling diodes (RTDs) and THz RTD oscillators. Furthermore, THz fundamental or sub-harmonic flip-chip Schottky diode mixer configurations are described. Different measurement techniques are commented and their properties are outlined. The chapter also relates the use of advanced mixer configurations. Fabrication technologies for Schottky-diode based structures for THz wave applications are included together with the low-barrier Schottky diode characterization for millimeter-wave detector design. Finally, LNAs for sub-millimeter waves are discussed, including up-to-date design approaches and resulting performance, with emphasis on the necessary technological modification to extend MMIC approaches toward the THz region.
2015
Settore ING-INF/01 - ELETTRONICA
English
Rilevanza internazionale
Capitolo o saggio
Diode fabrication technology; Flip-chip Schottky diode; InP HEMT technology; Low-barrier Schottky diode; Measurements techniques; MHEMTs; Resonant-tunneling diodes (RTDs); Schottky detector; THz harmonic mixers; THz RTD oscillators; TMIC LNAs;
resonant-tunneling diodes (RTDs); THz RTD oscillators; flip-chip Schottky diode; THz harmonic mixers; measurements techniques; diode fabrication technology; low-barrier Schottky diode; Schottky detector; TMIC LNAs; InP HEMT technology; mHEMTs
http://onlinelibrary.wiley.com/doi/10.1002/9781118920411.ch6/summary
Feiginov, M., Gonzalo, R., Maestrojuán, I., Cojocari, O., Hoefle, M., Limiti, E. (2015). THz Electronics. In L.E.G.M. Guillermo Carpintero (a cura di), Semiconductor Terahertz Technology: Devices and Systems at Room Temperature Operation (pp. 254-303). John Wiley & Sons, Ltd [10.1002/9781118920411.ch6].
Feiginov, M; Gonzalo, R; Maestrojuán, I; Cojocari, O; Hoefle, M; Limiti, E
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/160168
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