Surface transfer doping of hydrogen-terminated diamond has been achieved utilising V2O5 as a surface electron accepting material. Contact between the oxide and diamond surface promotes the transfer of electrons from the diamond into the V2O5 as revealed by the synchrotron-based high resolution photoemission spectroscopy. Electrical characterization by Hall measurement performed before and after V2O5 deposition shows an increase in hole carrier concentration in the diamond from 3.0x1012 to 1.8x1013cm2 at room temperature. High temperature Hall measurements performed up to 300 °C in atmosphere reveal greatly enhanced thermal stability of the hole channel produced using V2O5 in comparison with an air-induced surface conduction channel. Transfer doping of hydrogen-terminated diamond using high electron affinity oxides such as V2O5 is a promising approach for achieving thermally stable, high performance diamond based devices in comparison with air-induced surface transfer doping.

Crawford, K.G., Cao, L., Qi, D., Tallaire, A., Limiti, E., Verona, C., et al. (2016). Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability. APPLIED PHYSICS LETTERS, 108(4) [10.1063/1.4940749].

Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability

LIMITI, ERNESTO;VERONA, CLAUDIO;
2016

Abstract

Surface transfer doping of hydrogen-terminated diamond has been achieved utilising V2O5 as a surface electron accepting material. Contact between the oxide and diamond surface promotes the transfer of electrons from the diamond into the V2O5 as revealed by the synchrotron-based high resolution photoemission spectroscopy. Electrical characterization by Hall measurement performed before and after V2O5 deposition shows an increase in hole carrier concentration in the diamond from 3.0x1012 to 1.8x1013cm2 at room temperature. High temperature Hall measurements performed up to 300 °C in atmosphere reveal greatly enhanced thermal stability of the hole channel produced using V2O5 in comparison with an air-induced surface conduction channel. Transfer doping of hydrogen-terminated diamond using high electron affinity oxides such as V2O5 is a promising approach for achieving thermally stable, high performance diamond based devices in comparison with air-induced surface transfer doping.
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore ING-INF/01 - Elettronica
English
Con Impact Factor ISI
V2O5; Diamond; surface transfer doping; thermal stability
Article n. 042103
Crawford, K.G., Cao, L., Qi, D., Tallaire, A., Limiti, E., Verona, C., et al. (2016). Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability. APPLIED PHYSICS LETTERS, 108(4) [10.1063/1.4940749].
Crawford, K; Cao, L; Qi, D; Tallaire, A; Limiti, E; Verona, C; Wee, A; Moran, D
Articolo su rivista
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/160104
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 64
  • ???jsp.display-item.citation.isi??? 67
social impact