GaN HEMTs are ideal for making high-power amplifiers for satellite communication, because they are lightweight, compact, efficient and capable of delivering a high, uniform gain over a broad bandwidth.
Giofre', R., Colantonio, P., Gonzalez, L., De Arriba, F., Cabria, L. (2016). Demonstrating the capability of GaN HEMTs for Satellite Communication. COMPOUND SEMICONDUCTOR, 22(5), 32-38.
Demonstrating the capability of GaN HEMTs for Satellite Communication
GIOFRE', ROCCO;COLANTONIO, PAOLO;
2016-07-01
Abstract
GaN HEMTs are ideal for making high-power amplifiers for satellite communication, because they are lightweight, compact, efficient and capable of delivering a high, uniform gain over a broad bandwidth.File in questo prodotto:
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