Biaxially textured epitaxial thin-film heterostructures of ceria and 8 mol % yttria-stabilized zirconia (8YSZ) were grown using pulsed laser deposition (PLD) with the aim to unravel the effect of the interfacial conductivity on the charge transport properties. Five different samples were fabricated, keeping the total thickness constant (300 nm), but with a different number of heterointerfaces (between 4 and 60). To remove any potential contribution of the deposition substrate to the total conductivity, the heterostructures were grown on (001)-oriented MgO single-crystalline wafers. Layers free of high-angle grain boundaries and with low density of misfit dislocations were obtained, as revealed by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HR-TEM) analysis. The crystallographic quality of these samples allowed the investigation of their conduction properties, suppressing any transport effects along grain boundaries and/or interfacial dislocation pathways. Electrochemical impedance spectroscopy (EIS) and secondary ion mass spectroscopy (SIMS) measurements showed that for these samples the interfacial conductivity has a negligible effect on the transport properties. © 2012 American Chemical Society.

Pergolesi, D., Fabbri, E., Cook, S., Roddatis, V., Traversa, E., & Kilner, J. (2012). Tensile lattice distortion does not affect oxygen transport in Yttria-stabilized zirconia-CeO2 heterointerfaces. ACS NANO, 6(12), 10524-10534 [10.1021/nn302812m].

Tensile lattice distortion does not affect oxygen transport in Yttria-stabilized zirconia-CeO2 heterointerfaces

TRAVERSA, ENRICO;
2012

Abstract

Biaxially textured epitaxial thin-film heterostructures of ceria and 8 mol % yttria-stabilized zirconia (8YSZ) were grown using pulsed laser deposition (PLD) with the aim to unravel the effect of the interfacial conductivity on the charge transport properties. Five different samples were fabricated, keeping the total thickness constant (300 nm), but with a different number of heterointerfaces (between 4 and 60). To remove any potential contribution of the deposition substrate to the total conductivity, the heterostructures were grown on (001)-oriented MgO single-crystalline wafers. Layers free of high-angle grain boundaries and with low density of misfit dislocations were obtained, as revealed by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HR-TEM) analysis. The crystallographic quality of these samples allowed the investigation of their conduction properties, suppressing any transport effects along grain boundaries and/or interfacial dislocation pathways. Electrochemical impedance spectroscopy (EIS) and secondary ion mass spectroscopy (SIMS) measurements showed that for these samples the interfacial conductivity has a negligible effect on the transport properties. © 2012 American Chemical Society.
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore ING-IND/22 - Scienza e Tecnologia dei Materiali
English
Con Impact Factor ISI
heterostructure; interface; oxygen-ion conducting oxides; pulsed laser deposition; secondary ion mass spectrometry; strain; superlattice
http://www.scopus.com/inward/record.url?eid=2-s2.0-84871545804&partnerID=40&md5=8a6e69588b6108d01cadd287b899e316
Pergolesi, D., Fabbri, E., Cook, S., Roddatis, V., Traversa, E., & Kilner, J. (2012). Tensile lattice distortion does not affect oxygen transport in Yttria-stabilized zirconia-CeO2 heterointerfaces. ACS NANO, 6(12), 10524-10534 [10.1021/nn302812m].
Pergolesi, D; Fabbri, E; Cook, S; Roddatis, V; Traversa, E; Kilner, J
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/136200
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