Sub-gap absorption measurements are presented as a tool to characterize the amorphization and recrystallization processes in ion-implanted and annealed Si layers. The gap state density associated with the disorder introduced in the target crystalline lattice has been shown to saturate once the amorphization dose is exceeded. The doping effect due to implantation of impurity species is also reported. The absorption spectra have also been shown to be very sensitive to defects associated with precipitation of the implanted atoms. © 1990 Springer-Verlag.
Luciani, L., Zammit, U., Marinelli, M., Pizzoferrato, R. (1990). Sub-gap absorption study of defects in ion-implanted and annealed Si layers. APPLIED PHYSICS. A, SOLIDS AND SURFACES, 50(5), 495-498 [10.1007/BF00324573].
Sub-gap absorption study of defects in ion-implanted and annealed Si layers
ZAMMIT, UGO;MARINELLI, MASSIMO;PIZZOFERRATO, ROBERTO
1990-01-01
Abstract
Sub-gap absorption measurements are presented as a tool to characterize the amorphization and recrystallization processes in ion-implanted and annealed Si layers. The gap state density associated with the disorder introduced in the target crystalline lattice has been shown to saturate once the amorphization dose is exceeded. The doping effect due to implantation of impurity species is also reported. The absorption spectra have also been shown to be very sensitive to defects associated with precipitation of the implanted atoms. © 1990 Springer-Verlag.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.