A method is presented which, through the simultaneous analysis of the photothermal deflection spectroscopy (PDS) signal amplitude and phase spectra, enables to detect surface states and buried interface states and to measure their absorption. A theoretical model for the PDS signal suitable for the present approach has been developed and the measurements were performed on single crystalline GaAs wafers with ion-implanted layers on the front surface or buried beneath the front surface.
Zammit, U., Marinelli, M., Pizzoferrato, R. (1991). Surface states and buried interface states studies in semiconductors by photothermal deflection spectroscopy. JOURNAL OF APPLIED PHYSICS, 69(5), 3286-3290 [10.1063/1.348549].
Surface states and buried interface states studies in semiconductors by photothermal deflection spectroscopy
ZAMMIT, UGO;MARINELLI, MASSIMO;PIZZOFERRATO, ROBERTO
1991-01-01
Abstract
A method is presented which, through the simultaneous analysis of the photothermal deflection spectroscopy (PDS) signal amplitude and phase spectra, enables to detect surface states and buried interface states and to measure their absorption. A theoretical model for the PDS signal suitable for the present approach has been developed and the measurements were performed on single crystalline GaAs wafers with ion-implanted layers on the front surface or buried beneath the front surface.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
