The subgap absorption spectra of ion-implanted Si and GaAs layers are reported and the influence of increasing ion implantation dose is shown. The absorption spectra are shown to depend strongly on the implantation dose in the whole investigated spectrum before the layer amorphization dose is reached. Smaller changes are induced and only in a limited spectral region with further dose increases.

Luciani, L., Marinelli, M., Zammit, U., Pizzoferrato, R., Scudieri, F., Martellucci, S. (1989). Subgap absorption spectra of ion-implanted Si and GaAs layers. APPLIED PHYSICS LETTERS, 55(26), 2745-2747 [10.1063/1.101941].

Subgap absorption spectra of ion-implanted Si and GaAs layers

MARINELLI, MASSIMO;ZAMMIT, UGO;PIZZOFERRATO, ROBERTO;SCUDIERI, FOLCO;MARTELLUCCI, SERGIO
1989-01-01

Abstract

The subgap absorption spectra of ion-implanted Si and GaAs layers are reported and the influence of increasing ion implantation dose is shown. The absorption spectra are shown to depend strongly on the implantation dose in the whole investigated spectrum before the layer amorphization dose is reached. Smaller changes are induced and only in a limited spectral region with further dose increases.
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/01 - Fisica Sperimentale
English
Con Impact Factor ISI
Physics and Astronomy (miscellaneous)
Luciani, L., Marinelli, M., Zammit, U., Pizzoferrato, R., Scudieri, F., Martellucci, S. (1989). Subgap absorption spectra of ion-implanted Si and GaAs layers. APPLIED PHYSICS LETTERS, 55(26), 2745-2747 [10.1063/1.101941].
Luciani, L; Marinelli, M; Zammit, U; Pizzoferrato, R; Scudieri, F; Martellucci, S
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/131529
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