High quality synthetic diamonds were grown on single-crystal silicon by microwave plasma enhanced chemical vapour deposition (CVD). A careful optimisation of both the experimental setup and the growth parameters was necessary before that the achievement of the best results was made possible. The films were deposited using a CH4-H2 gas mixture at methane concentrations variable in the range 0.6-2.2%, while the substrate temperature was fixed at 750 °C. Raman spectroscopy and photoluminescence (PL) were utilised to monitor the quality of the deposited films and to study the spatial distribution of defects, respectively. Micro-Raman analysis shows that linewidths of the diamond peak lower than 2.4 cm-1 can be easily measured at the growth surface, indicating that the crystalline quality of individual grains is comparable to that of the best natural diamonds. The excellent phase purity of the diamond microcrystals at the growth surface is witnessed by the complete absence of any non-diamond carbon feature and by a very weak luminescence background in the 1.6-2.4 eV spectral range. A worsening of the quality of the diamond particles is found moving from the growth surface towards the film-substrate interface. A photoluminescence feature at about 1.68 eV, commonly associated to Si impurities, is distinctly observed as the exciting laser beam is focused close to the interface. A progressive degradation of the global quality of the films is found with increasing methane concentration in the gas mixture, as witnessed by an increased PL background in the films grown at higher methane concentrations.

Donato, M.g., Faggio, G., Marinelli, M., Messina, G., Milani, E., Paoletti, A., et al. (2001). High quality CVD diamond: A Raman scattering and photoluminescence study. THE EUROPEAN PHYSICAL JOURNAL. B, CONDENSED MATTER PHYSICS, 20(1), 133-139 [10.1007/s100510170291].

High quality CVD diamond: A Raman scattering and photoluminescence study

MARINELLI, MARCO;MILANI, ENRICO;VERONA RINATI, GIANLUCA
2001

Abstract

High quality synthetic diamonds were grown on single-crystal silicon by microwave plasma enhanced chemical vapour deposition (CVD). A careful optimisation of both the experimental setup and the growth parameters was necessary before that the achievement of the best results was made possible. The films were deposited using a CH4-H2 gas mixture at methane concentrations variable in the range 0.6-2.2%, while the substrate temperature was fixed at 750 °C. Raman spectroscopy and photoluminescence (PL) were utilised to monitor the quality of the deposited films and to study the spatial distribution of defects, respectively. Micro-Raman analysis shows that linewidths of the diamond peak lower than 2.4 cm-1 can be easily measured at the growth surface, indicating that the crystalline quality of individual grains is comparable to that of the best natural diamonds. The excellent phase purity of the diamond microcrystals at the growth surface is witnessed by the complete absence of any non-diamond carbon feature and by a very weak luminescence background in the 1.6-2.4 eV spectral range. A worsening of the quality of the diamond particles is found moving from the growth surface towards the film-substrate interface. A photoluminescence feature at about 1.68 eV, commonly associated to Si impurities, is distinctly observed as the exciting laser beam is focused close to the interface. A progressive degradation of the global quality of the films is found with increasing methane concentration in the gas mixture, as witnessed by an increased PL background in the films grown at higher methane concentrations.
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/01 - Fisica Sperimentale
English
78.30.Am Elemental semiconductors and insulators; 78.55.Ap Elemental semiconductors; 81.05.Uw Carbon, diamond, graphite
http://www.scopus.com/inward/record.url?eid=2-s2.0-0041349140&partnerID=40&md5=8d6e944d48d5bc5b03b849957a86c49e
Donato, M.g., Faggio, G., Marinelli, M., Messina, G., Milani, E., Paoletti, A., et al. (2001). High quality CVD diamond: A Raman scattering and photoluminescence study. THE EUROPEAN PHYSICAL JOURNAL. B, CONDENSED MATTER PHYSICS, 20(1), 133-139 [10.1007/s100510170291].
Donato, Mg; Faggio, G; Marinelli, M; Messina, G; Milani, E; Paoletti, A; Santangelo, S; Tucciarone, A; VERONA RINATI, G
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/131491
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