A study was performed on the experimental determination of electron and hole mean drift distance in chemical vapor deposition polycrystalline diamond. Air was used as an absorbing layer in order to change the energy of the impinging α particles. The results showed that the pumping process was much more effective on hole conduction.
Marinelli, M., Milani, E., Pucella, G., Tucciarone, A., VERONA RINATI, G., Angelone, M., et al. (2003). Experimental determination of electron and hole mean drift distance: Application to chemical vapor deposition diamond. APPLIED PHYSICS LETTERS, 82(26), 4723-4725 [10.1063/1.1586475].
Experimental determination of electron and hole mean drift distance: Application to chemical vapor deposition diamond
MARINELLI, MARCO;MILANI, ENRICO;VERONA RINATI, GIANLUCA;
2003-01-01
Abstract
A study was performed on the experimental determination of electron and hole mean drift distance in chemical vapor deposition polycrystalline diamond. Air was used as an absorbing layer in order to change the energy of the impinging α particles. The results showed that the pumping process was much more effective on hole conduction.File in questo prodotto:
File | Dimensione | Formato | |
---|---|---|---|
Apl 2003 Experimental determination.pdf
accesso aperto
Licenza:
Copyright dell'editore
Dimensione
47.47 kB
Formato
Adobe PDF
|
47.47 kB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.