The distribution of gap states has been obtained from subgap absorption measurements in ion-implanted Si and GaAs layers and the changes induced by increasing the implantation ion dose have been monitored. The variations in slope which are observed with increasing dose in the spectral region at energies lower than the band-edge region are shown to be mainly affected by a shift of the energy position of the peak of the calculated distributions. © 1992 The American Physical Society.
Zammit, U., Marinelli, M., Pizzoferrato, R., Mercuri, F. (1992). Gap-states distribution of ion-implanted Si and GaAs from subgap absorption measurements. PHYSICAL REVIEW. B, CONDENSED MATTER, 46(12), 7515-7518 [10.1103/PhysRevB.46.7515].
Gap-states distribution of ion-implanted Si and GaAs from subgap absorption measurements
ZAMMIT, UGO;MARINELLI, MASSIMO;PIZZOFERRATO, ROBERTO;MERCURI, FULVIO
1992-01-01
Abstract
The distribution of gap states has been obtained from subgap absorption measurements in ion-implanted Si and GaAs layers and the changes induced by increasing the implantation ion dose have been monitored. The variations in slope which are observed with increasing dose in the spectral region at energies lower than the band-edge region are shown to be mainly affected by a shift of the energy position of the peak of the calculated distributions. © 1992 The American Physical Society.| File | Dimensione | Formato | |
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