The distribution of gap states has been obtained from subgap absorption measurements in ion-implanted Si and GaAs layers and the changes induced by increasing the implantation ion dose have been monitored. The variations in slope which are observed with increasing dose in the spectral region at energies lower than the band-edge region are shown to be mainly affected by a shift of the energy position of the peak of the calculated distributions. © 1992 The American Physical Society.
Zammit, U., Marinelli, M., Pizzoferrato, R., & Mercuri, F. (1992). Gap-states distribution of ion-implanted Si and GaAs from subgap absorption measurements. PHYSICAL REVIEW. B, CONDENSED MATTER, 46(12), 7515-7518.
Tipologia: | Articolo su rivista |
Citazione: | Zammit, U., Marinelli, M., Pizzoferrato, R., & Mercuri, F. (1992). Gap-states distribution of ion-implanted Si and GaAs from subgap absorption measurements. PHYSICAL REVIEW. B, CONDENSED MATTER, 46(12), 7515-7518. |
IF: | Con Impact Factor ISI |
Lingua: | English |
Settore Scientifico Disciplinare: | Settore FIS/01 - Fisica Sperimentale Settore FIS/07 - Fisica Applicata(Beni Culturali, Ambientali, Biol.e Medicin) |
Revisione (peer review): | Esperti anonimi |
Tipo: | Articolo |
Rilevanza: | Rilevanza internazionale |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1103/PhysRevB.46.7515 |
Stato di pubblicazione: | Pubblicato |
Data di pubblicazione: | 1992 |
Titolo: | Gap-states distribution of ion-implanted Si and GaAs from subgap absorption measurements |
Autori: | |
Autori: | Zammit, U; Marinelli, M; Pizzoferrato, R; Mercuri, F |
Appare nelle tipologie: | 01 - Articolo su rivista |
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