Photoluminescence (PL) emission spectra have been carried out on a partially relaxed Si/Si1-xGex/Si quantum well (QW) grown by solid-source MBE at a nominal composition of x = 17%. The results are discussed in terms of the film morphology, as derived from structural techniques (SEM, RHEED, RBS and XRD), especially as regards the presence of a high density of dots-like 3D structures. PL spectra show an intense broad band, attributed to excitonic recombinations at interstitial plateletes in the dots, with smaller XNP and XTO excitonic lines due to phonon-resolved interband transitions originated from the strained epitaxyal layer grown before the dot formation.
De Padova, P., Perfetti, P., Felici, R., Priori, S., Quaresima, C., Pizzoferrato, R., et al. (1997). Photoluminescence characterization of SiGe QW grown by MBE. JOURNAL OF LUMINESCENCE, 72-74, 324-326 [10.1016/S0022-2313(96)00203-7].
Photoluminescence characterization of SiGe QW grown by MBE
PIZZOFERRATO, ROBERTO;CASALBONI, MAURO;PROSPOSITO, PAOLO;
1997-01-01
Abstract
Photoluminescence (PL) emission spectra have been carried out on a partially relaxed Si/Si1-xGex/Si quantum well (QW) grown by solid-source MBE at a nominal composition of x = 17%. The results are discussed in terms of the film morphology, as derived from structural techniques (SEM, RHEED, RBS and XRD), especially as regards the presence of a high density of dots-like 3D structures. PL spectra show an intense broad band, attributed to excitonic recombinations at interstitial plateletes in the dots, with smaller XNP and XTO excitonic lines due to phonon-resolved interband transitions originated from the strained epitaxyal layer grown before the dot formation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
