Photoluminescence (PL) emission spectra have been carried out on a partially relaxed Si/Si1-xGex/Si quantum well (QW) grown by solid-source MBE at a nominal composition of x = 17%. The results are discussed in terms of the film morphology, as derived from structural techniques (SEM, RHEED, RBS and XRD), especially as regards the presence of a high density of dots-like 3D structures. PL spectra show an intense broad band, attributed to excitonic recombinations at interstitial plateletes in the dots, with smaller XNP and XTO excitonic lines due to phonon-resolved interband transitions originated from the strained epitaxyal layer grown before the dot formation.

De Padova, P., Perfetti, P., Felici, R., Priori, S., Quaresima, C., Pizzoferrato, R., et al. (1997). Photoluminescence characterization of SiGe QW grown by MBE. JOURNAL OF LUMINESCENCE, 72-74, 324-326.

Photoluminescence characterization of SiGe QW grown by MBE

PIZZOFERRATO, ROBERTO;CASALBONI, MAURO;PROSPOSITO, PAOLO;
1997

Abstract

Photoluminescence (PL) emission spectra have been carried out on a partially relaxed Si/Si1-xGex/Si quantum well (QW) grown by solid-source MBE at a nominal composition of x = 17%. The results are discussed in terms of the film morphology, as derived from structural techniques (SEM, RHEED, RBS and XRD), especially as regards the presence of a high density of dots-like 3D structures. PL spectra show an intense broad band, attributed to excitonic recombinations at interstitial plateletes in the dots, with smaller XNP and XTO excitonic lines due to phonon-resolved interband transitions originated from the strained epitaxyal layer grown before the dot formation.
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/01 - Fisica Sperimentale
Settore FIS/03 - Fisica della Materia
Settore FIS/07 - Fisica Applicata(Beni Culturali, Ambientali, Biol.e Medicin)
English
MBE; Photoluminescence; Quantum well; SiGe; Physical and Theoretical Chemistry; Atomic and Molecular Physics, and Optics
De Padova, P., Perfetti, P., Felici, R., Priori, S., Quaresima, C., Pizzoferrato, R., et al. (1997). Photoluminescence characterization of SiGe QW grown by MBE. JOURNAL OF LUMINESCENCE, 72-74, 324-326.
De Padova, P; Perfetti, P; Felici, R; Priori, S; Quaresima, C; Pizzoferrato, R; Casalboni, M; Prosposito, P; Corni, F; Tonini, R; Grilli, A; Raco, A
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/130850
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