In this work we review basic aspects of multi- scale approaches for combining atomistic with continuous media descriptions and quantum mechanical with semiclassi- cal drift­diffusion transport models for LED simulations. We show how hybrid coupling of the Green's function formalism with drift­diffusion simulations can give additional insight into device behaviour without compromising too much com- putational efficiency, and that the inclusion of atomistic tight- binding calculations in a multiscale framework can help in understanding specific features related to alloy fluctuations.

AUF DER MAUR, M. (2015). Multiscale approaches for the simulation of InGaN/GaN LEDs. JOURNAL OF COMPUTATIONAL ELECTRONICS, 14(2), 398-408 [10.1007/s10825-015-0683-3].

Multiscale approaches for the simulation of InGaN/GaN LEDs

AUF DER MAUR, MATTHIAS
2015-01-01

Abstract

In this work we review basic aspects of multi- scale approaches for combining atomistic with continuous media descriptions and quantum mechanical with semiclassi- cal drift­diffusion transport models for LED simulations. We show how hybrid coupling of the Green's function formalism with drift­diffusion simulations can give additional insight into device behaviour without compromising too much com- putational efficiency, and that the inclusion of atomistic tight- binding calculations in a multiscale framework can help in understanding specific features related to alloy fluctuations.
2015
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore ING-INF/01 - ELETTRONICA
English
Con Impact Factor ISI
LED simulation ; GaN ; Multiscale modeling ; Atomistic models ; Random alloy
AUF DER MAUR, M. (2015). Multiscale approaches for the simulation of InGaN/GaN LEDs. JOURNAL OF COMPUTATIONAL ELECTRONICS, 14(2), 398-408 [10.1007/s10825-015-0683-3].
AUF DER MAUR, M
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/112793
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