Multiscale approaches for the simulation of InGaN/GaN LEDs

In this work we review basic aspects of multi- scale approaches for combining atomistic with continuous media descriptions and quantum mechanical with semiclassi- cal drift­diffusion transport models for LED simulations. We show how hybrid coupling of the Green's function formalism with drift­diffusion simulations can give additional insight into device behaviour without compromising too much com- putational efficiency, and that the inclusion of atomistic tight- binding calculations in a multiscale framework can help in understanding specific features related to alloy fluctuations.