A new model based on detailed numerical simulations is proposed to show how the doping of the electron transport material in solid-state dye-sensitized solar cells (ss-DSCs) changes the nature of carrier transport in the device. Differently from standard DSCs, where charge transport is fundamentally diffusive, in n-doped ss-DSCs, it becomes drift driven. The relevance of the internal electric field of the cell casts light on the influence of trap states within ss-DSCs.
Gagliardi, A., Gentilini, D., DI CARLO, A. (2012). Charge Transport in Solid-State Dye-Sensitized Solar Cells. JOURNAL OF PHYSICAL CHEMISTRY. C, 116(45), 23882-23889 [10.1021/jp305655c].
Charge Transport in Solid-State Dye-Sensitized Solar Cells
GAGLIARDI, ALESSIO;DI CARLO, ALDO
2012-01-01
Abstract
A new model based on detailed numerical simulations is proposed to show how the doping of the electron transport material in solid-state dye-sensitized solar cells (ss-DSCs) changes the nature of carrier transport in the device. Differently from standard DSCs, where charge transport is fundamentally diffusive, in n-doped ss-DSCs, it becomes drift driven. The relevance of the internal electric field of the cell casts light on the influence of trap states within ss-DSCs.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
