The design of a harmonic-tuned dual-band GaN HEMT power amplifier (1.28 GHz and 2.14 GHz) is presented. To increase the output power and efficiency, the transistor's load impedance at the fundamental frequency, second and third harmonics have been optimally selected. In order to design the output matching network, a new genetic-based software system for automatic synthesis of passive networks has been used. The measured performances of the dual-band amplifier are as follows: Pout = 37.28 dBm, G = 11 dB, PAE = 42.1% at f1 = 1.28 GHz; Pout = 35.7 dBm, G = 9 dB, PAE = 23.7% at f2 = 2.14 GHz
Kokolov, A., Sheyerman, F., Colantonio, P., Babak, L., Kalentyev, A. (2014). Genetic-based design of harmonic-tuned dual-band GaN HEMT power amplifier. PROCEDIA TECHNOLOGY, 18, 2-5 [10.1016/j.protcy.2014.11.003].
Genetic-based design of harmonic-tuned dual-band GaN HEMT power amplifier
COLANTONIO, PAOLO;
2014-01-01
Abstract
The design of a harmonic-tuned dual-band GaN HEMT power amplifier (1.28 GHz and 2.14 GHz) is presented. To increase the output power and efficiency, the transistor's load impedance at the fundamental frequency, second and third harmonics have been optimally selected. In order to design the output matching network, a new genetic-based software system for automatic synthesis of passive networks has been used. The measured performances of the dual-band amplifier are as follows: Pout = 37.28 dBm, G = 11 dB, PAE = 42.1% at f1 = 1.28 GHz; Pout = 35.7 dBm, G = 9 dB, PAE = 23.7% at f2 = 2.14 GHz| File | Dimensione | Formato | |
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J25 - An Overview of RF Power Amplifier Digital Predistortion Techniques for Wireless Communication Systems.pdf
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