In this paper, we illustrate an approach to discriminate between epitaxial strain and other factors responsible for the decrease of the metal-insulator transition temperature (T-P) in thin La0.7Sr0.3MnO3 films grown by pulsed laser deposition. Using this approach, we have estimated the effect of the biaxial strain on T-P. Ultrathin films, independent of epitaxial strain, do not show any metal-insulator transition over the full temperature range. This finding confirms the existence of an interface dead layer. The strain-independent decrease in T-P, relative to its bulk value, observed for a much wider thickness range (up to about 1000 A) can most likely be attributed to oxygen deficiency. (C) 2004 American Institute of Physics.
Angeloni, M., Balestrino, G., Boggio, N., Medaglia, P.g., Orgiani, P., Tebano, A. (2004). Suppression of the metal-insulator transition temperature in thin La0.7Sr0.3MnO3 films. JOURNAL OF APPLIED PHYSICS, 96(11), 6387-6392 [10.1063/1.1812599].
Suppression of the metal-insulator transition temperature in thin La0.7Sr0.3MnO3 films
BALESTRINO, GIUSEPPE;MEDAGLIA, PIER GIANNI;TEBANO, ANTONELLO
2004-01-01
Abstract
In this paper, we illustrate an approach to discriminate between epitaxial strain and other factors responsible for the decrease of the metal-insulator transition temperature (T-P) in thin La0.7Sr0.3MnO3 films grown by pulsed laser deposition. Using this approach, we have estimated the effect of the biaxial strain on T-P. Ultrathin films, independent of epitaxial strain, do not show any metal-insulator transition over the full temperature range. This finding confirms the existence of an interface dead layer. The strain-independent decrease in T-P, relative to its bulk value, observed for a much wider thickness range (up to about 1000 A) can most likely be attributed to oxygen deficiency. (C) 2004 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.