Carrier confinement effects in nanocolumnar AlxGa1-xN/GaN multiple quantum disks have been studied by photoluminescence, as a function of the Al content and quantum disk thickness. Experimental emission energies are compared to theoretical calculations based on a one-dimensional Schrodinger-Poisson solver, including spontaneous and piezoelectric polarizations, surface potentials, and strain. An inhomogeneous biaxial (in-plane) strain distribution within the GaN quantum disks, pseudomorphically grown on strain-free AlxGa1-xN nanocolumns, results from a reduction of the accumulated elastic energy at the disk free surface (GaN-air boundary). This strain reduction annihilates partially the piezoelectric field, giving rise to a specific carrier confinement mechanism (strain confinement), that depends on the disk thickness. This strain confinement mechanism is the origin of the luminescence quenching in very thin GaN quantum disks, as well as the main source of the emission linewidth broadening.

Ristic, J., Rivera, C., Calleja, E., Fernandez Garrido, S., Povoloskyi, M., DI CARLO, A. (2005). Carrier-confinement effects in nanocolumnar GaN/AlxGa1-xN quantum disks grown by molecular-beam epitaxy. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 72(8), 1-6 [10.1103/PhysRevB.72.085330].

Carrier-confinement effects in nanocolumnar GaN/AlxGa1-xN quantum disks grown by molecular-beam epitaxy

DI CARLO, ALDO
2005-01-01

Abstract

Carrier confinement effects in nanocolumnar AlxGa1-xN/GaN multiple quantum disks have been studied by photoluminescence, as a function of the Al content and quantum disk thickness. Experimental emission energies are compared to theoretical calculations based on a one-dimensional Schrodinger-Poisson solver, including spontaneous and piezoelectric polarizations, surface potentials, and strain. An inhomogeneous biaxial (in-plane) strain distribution within the GaN quantum disks, pseudomorphically grown on strain-free AlxGa1-xN nanocolumns, results from a reduction of the accumulated elastic energy at the disk free surface (GaN-air boundary). This strain reduction annihilates partially the piezoelectric field, giving rise to a specific carrier confinement mechanism (strain confinement), that depends on the disk thickness. This strain confinement mechanism is the origin of the luminescence quenching in very thin GaN quantum disks, as well as the main source of the emission linewidth broadening.
2005
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore ING-INF/01 - ELETTRONICA
English
Con Impact Factor ISI
optical-properties; width dependence; gan nanocolumns; nitrides; fields; wells
http://prb.aps.org/pdf/PRB/v72/i8/e085330
Ristic, J., Rivera, C., Calleja, E., Fernandez Garrido, S., Povoloskyi, M., DI CARLO, A. (2005). Carrier-confinement effects in nanocolumnar GaN/AlxGa1-xN quantum disks grown by molecular-beam epitaxy. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 72(8), 1-6 [10.1103/PhysRevB.72.085330].
Ristic, J; Rivera, C; Calleja, E; Fernandez Garrido, S; Povoloskyi, M; DI CARLO, A
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/8137
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