The results of a density functional calculation on gallium nitride are given. We use norm-conserving pseudopotentials with sufficiently extended sets of plane waves to investigate the ground-state properties and the electronic band structure for the zincblende phase of GaN and compare them with the corresponding results for the wurtzite structure. A comparison with the outcomes of other calculations and with the existing experimental data is also given.

Palummo, M., Bertoni, C., Reining, L., Finocchi, F. (1993). The electronic structure of gallium nitride. PHYSICA. B, CONDENSED MATTER, 185, 404-409.

The electronic structure of gallium nitride

PALUMMO, MAURIZIA;
1993-01-01

Abstract

The results of a density functional calculation on gallium nitride are given. We use norm-conserving pseudopotentials with sufficiently extended sets of plane waves to investigate the ground-state properties and the electronic band structure for the zincblende phase of GaN and compare them with the corresponding results for the wurtzite structure. A comparison with the outcomes of other calculations and with the existing experimental data is also given.
1993
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore FIS/03 - FISICA DELLA MATERIA
English
Con Impact Factor ISI
Band structure; Crystal structure; Crystal symmetry; Energy gap; Mathematical models; Nitrides; Density functional; Gallium nitride; Ground state properties; Norm conserving pseudopotentials; Wurztite structure; Zincblende phase; Semiconducting gallium compounds
Palummo, M., Bertoni, C., Reining, L., Finocchi, F. (1993). The electronic structure of gallium nitride. PHYSICA. B, CONDENSED MATTER, 185, 404-409.
Palummo, M; Bertoni, C; Reining, L; Finocchi, F
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/53230
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