The deposition of diamond films on silicon substrate by MWPECVD is described and microstructural characteristics of the obtained films are reported. The resistive and piezoresistive properties of the diamond-on-silicon films have been measured beyond 200 °C by means of a purposely developed apparatus, and experimental results are reported. The piezoresistive properties at high temperature are exploited in the development of a micromachined pressure sensor capable of operating at up to 350-380 °C. A dedicated signal-conditioning electronic circuit is being designed and its functioning principle is here described.
Crescini, D., Ferrari, V., Vajna, Z., Marioli, D., Taroni, A., Borgese, A., et al. (2003). Design and development of a piezoresistive pressure sensor on micromachined silicon for high-temperature applications and of a signal-conditioning electronic circuit. MICROSYSTEM TECHNOLOGIES, 9(6-7), 431-435 [10.1007/s00542-002-0288-1].
Design and development of a piezoresistive pressure sensor on micromachined silicon for high-temperature applications and of a signal-conditioning electronic circuit
MARINELLI, MARCO;MILANI, ENRICO;VERONA RINATI, GIANLUCA
2003-09-01
Abstract
The deposition of diamond films on silicon substrate by MWPECVD is described and microstructural characteristics of the obtained films are reported. The resistive and piezoresistive properties of the diamond-on-silicon films have been measured beyond 200 °C by means of a purposely developed apparatus, and experimental results are reported. The piezoresistive properties at high temperature are exploited in the development of a micromachined pressure sensor capable of operating at up to 350-380 °C. A dedicated signal-conditioning electronic circuit is being designed and its functioning principle is here described.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
