A set of diamond films was grown by microwave plasma enhanced chemical vapour deposition using a CO2-CH4 gas mixture. Film morphology, preferential orientation and crystal quality were systematically changed by varying the CW, concentration and substrate temperature in the ranges 47-52% and 750-850 degrees C, respectively. The resulting films were characterised by scanning electron microscopy, X-ray diffraction, Raman spectroscopy and cathodoluminescence (CL). The crystalline quality of the films, as assessed by Raman spectroscopy, increases at lower substrate temperatures (T-s = 750 degrees C) and when moving from (110) towards (100) texturing. Independently of the substrate temperature, a strong decrease of the band-A cathodoluminescence at 435 nm is found as the him preferential orientation goes from (110) to (100). A clear correlation between the width of the diamond Raman line and the band-A emission is observed, giving insight into the nature of this band. In particular, this result is consistent with the attribution of band-A CL to the presence of dislocations. (C) 1999 Published by Elsevier Science S.A. All rights reserved.

Faggio, G., Marinelli, M., Messina, G., Milani, E., Paoletti, A., Santangelo, S., et al. (1999). Comparative study of band-A cathodoluminescence and Raman spectroscopy in CVD diamond films. In DIAMOND AND RELATED MATERIALS (pp.640-644). LAUSANNE : ELSEVIER SCIENCE SA [10.1016/S0925-9635(98)00273-8].

Comparative study of band-A cathodoluminescence and Raman spectroscopy in CVD diamond films

MARINELLI, MARCO;MILANI, ENRICO;VERONA RINATI, GIANLUCA
1999-03-01

Abstract

A set of diamond films was grown by microwave plasma enhanced chemical vapour deposition using a CO2-CH4 gas mixture. Film morphology, preferential orientation and crystal quality were systematically changed by varying the CW, concentration and substrate temperature in the ranges 47-52% and 750-850 degrees C, respectively. The resulting films were characterised by scanning electron microscopy, X-ray diffraction, Raman spectroscopy and cathodoluminescence (CL). The crystalline quality of the films, as assessed by Raman spectroscopy, increases at lower substrate temperatures (T-s = 750 degrees C) and when moving from (110) towards (100) texturing. Independently of the substrate temperature, a strong decrease of the band-A cathodoluminescence at 435 nm is found as the him preferential orientation goes from (110) to (100). A clear correlation between the width of the diamond Raman line and the band-A emission is observed, giving insight into the nature of this band. In particular, this result is consistent with the attribution of band-A CL to the presence of dislocations. (C) 1999 Published by Elsevier Science S.A. All rights reserved.
9th European Conference on Diamond, Diamond-like Materials, Nitrides and Silicon Carbide (Diamond 1998)
IRAKLION, GREECE
SEP 13-18, 1998
Renishaw plc, St Gobain, Elsevier Sci
Rilevanza internazionale
mar-1999
Settore FIS/01 - FISICA SPERIMENTALE
English
cathodoluminescence; CVD diamond; Raman spectroscopy; texture
5
Intervento a convegno
Faggio, G., Marinelli, M., Messina, G., Milani, E., Paoletti, A., Santangelo, S., et al. (1999). Comparative study of band-A cathodoluminescence and Raman spectroscopy in CVD diamond films. In DIAMOND AND RELATED MATERIALS (pp.640-644). LAUSANNE : ELSEVIER SCIENCE SA [10.1016/S0925-9635(98)00273-8].
Faggio, G; Marinelli, M; Messina, G; Milani, E; Paoletti, A; Santangelo, S; Tucciarone, A; VERONA RINATI, G
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/51524
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