In this paper, we report on the characterization of homoepitaxial CVD diamond grown onto HPHT Ib diamond substrates by varying systematically the methane to hydrogen ratio in the deposition gas mixture (1-7%) and the microwave power (520-720 W). Growth rates up to approximately 2.2 μm/h have been achieved. X-ray diffraction, Raman spectroscopy and photoluminescence (PL) have been used to characterize the diamond samples. Raman measurements point out an excellent crystalline quality and phase purity of the homoepitaxial specimens even at the highest CH<sub>4</sub> concentration used. Completely flat PL spectra registered in a wide energy range (1.7-2.7 eV) exclude impurity contamination of the diamond samples. Such results show that homoepitaxial CVD diamond can be grown, at moderate microwave power and with moderate growth rate, preserving a good crystalline quality. [All rights reserved Elsevier]

Donato, M., Faggio, G., Messina, G., Potenza, R., Santangelo, S., Scoccia, M., et al. (2006). Characterization of homoepitaxial CVD diamond grown at moderate microwave power. DIAMOND AND RELATED MATERIALS, 15(4-8), 517-521 [10.1016/j.diamond.2005.11.040].

Characterization of homoepitaxial CVD diamond grown at moderate microwave power

VERONA RINATI, GIANLUCA
2006-01-01

Abstract

In this paper, we report on the characterization of homoepitaxial CVD diamond grown onto HPHT Ib diamond substrates by varying systematically the methane to hydrogen ratio in the deposition gas mixture (1-7%) and the microwave power (520-720 W). Growth rates up to approximately 2.2 μm/h have been achieved. X-ray diffraction, Raman spectroscopy and photoluminescence (PL) have been used to characterize the diamond samples. Raman measurements point out an excellent crystalline quality and phase purity of the homoepitaxial specimens even at the highest CH4 concentration used. Completely flat PL spectra registered in a wide energy range (1.7-2.7 eV) exclude impurity contamination of the diamond samples. Such results show that homoepitaxial CVD diamond can be grown, at moderate microwave power and with moderate growth rate, preserving a good crystalline quality. [All rights reserved Elsevier]
2006
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore FIS/01 - FISICA SPERIMENTALE
English
Con Impact Factor ISI
crystal structure;diamond;elemental semiconductors;photoluminescence;plasma CVD;plasma CVD coatings;Raman spectra;semiconductor epitaxial layers;semiconductor growth;vapour phase epitaxial growth;X-ray diffraction;
Donato, M., Faggio, G., Messina, G., Potenza, R., Santangelo, S., Scoccia, M., et al. (2006). Characterization of homoepitaxial CVD diamond grown at moderate microwave power. DIAMOND AND RELATED MATERIALS, 15(4-8), 517-521 [10.1016/j.diamond.2005.11.040].
Donato, M; Faggio, G; Messina, G; Potenza, R; Santangelo, S; Scoccia, M; Tuve, C; VERONA RINATI, G
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/50403
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