In this contribution, the design and full characterisation of a high efficiency Ultra-Wide-Band power amplifier are presented. The amplifier, based on GaN technology device, has been designed using a CAD oriented broad band matching approach for both input and output networks. The continuous wave measurements results in an average drain efficiency around 50% from 0.8GHz to 4GHz with an output power higher than 32dBm in the overall bandwidth.

Colantonio, P., Giannini, F., Giofre', R., Piazzon, L. (2008). 0.8-4 GHz high efficiency power amplifier in GaN technology. In 17th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2008.

0.8-4 GHz high efficiency power amplifier in GaN technology

COLANTONIO, PAOLO;GIANNINI, FRANCO;GIOFRE', ROCCO;PIAZZON, LUCA
2008-05-01

Abstract

In this contribution, the design and full characterisation of a high efficiency Ultra-Wide-Band power amplifier are presented. The amplifier, based on GaN technology device, has been designed using a CAD oriented broad band matching approach for both input and output networks. The continuous wave measurements results in an average drain efficiency around 50% from 0.8GHz to 4GHz with an output power higher than 32dBm in the overall bandwidth.
International Conference on Microwaves, Radar and Wireless Communications, MIKON
Wroclaw, Poland
2008
XVII
Rilevanza internazionale
contributo
mag-2008
Settore ING-INF/01 - ELETTRONICA
English
Gallium alloys; Gallium nitride; Microwaves; Power amplifiers; Radar; Radio waves; Semiconducting gallium; Wireless networks; Broad bands; Characterisation; Continuous wave measurements; Drain efficiencies; GaN technologies; High efficiencies; High efficiency power amplifiers; Input and outputs; Output powers; Broadband amplifiers
Intervento a convegno
Colantonio, P., Giannini, F., Giofre', R., Piazzon, L. (2008). 0.8-4 GHz high efficiency power amplifier in GaN technology. In 17th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2008.
Colantonio, P; Giannini, F; Giofre', R; Piazzon, L
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/49520
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