We present a photoemission study of local order in hydrogenated amorphous silicon - germanium alloys and in heterojunctions between germanium and amorphous silicon. By measuring the broadening of the Ge 3d core level upon alloying or at the interface we estimate disorder - induced static charge fluctuations in these systems. © 1987.

Evangelisti, F., Boscherini, F., Cimino, R., Patella, F., Perfetti, P., Quaresima, C. (1987). Local order in silicon - germanium alloys and at silicon - germanium heterojunctions by analysis of Ge 3d core levels, 97-98(PART 1), 407-410 [10.1016/0022-3093(87)90095-0].

Local order in silicon - germanium alloys and at silicon - germanium heterojunctions by analysis of Ge 3d core levels

PATELLA, FULVIA;
1987-01-01

Abstract

We present a photoemission study of local order in hydrogenated amorphous silicon - germanium alloys and in heterojunctions between germanium and amorphous silicon. By measuring the broadening of the Ge 3d core level upon alloying or at the interface we estimate disorder - induced static charge fluctuations in these systems. © 1987.
1987
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore FIS/03 - FISICA DELLA MATERIA
English
Con Impact Factor ISI
silicon,germanium,photoemission
Evangelisti, F., Boscherini, F., Cimino, R., Patella, F., Perfetti, P., Quaresima, C. (1987). Local order in silicon - germanium alloys and at silicon - germanium heterojunctions by analysis of Ge 3d core levels, 97-98(PART 1), 407-410 [10.1016/0022-3093(87)90095-0].
Evangelisti, F; Boscherini, F; Cimino, R; Patella, F; Perfetti, P; Quaresima, C
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/45408
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