Diamond deposits of well-separated particles have been obtained by the hot filament CVD technique on Si(100) wafers. Particle counting in SEM images and determination of their linear dimensions require a separate study of growth rates and of nucleation densities as a function of time, substrate temperature (500-degrees-C-950-degrees-C), gas phase composition (0.5-2% CH4 in H2), and total pressure (15-76 Torr). It is shown that recent models proposed for the growth process can successfully be applied if proper consideration is given to the high catalytic activity of the growing diamond surface for the heterogeneous recombination of gaseous H-atoms. This fast reaction controls the H-atom concentration at the surface and couples growth rates and nucleation densities via the gas phase.

Molinari, E., Polini, R., TERRANOVA PERSICHELLI, M.l., Ascarelli, P., Fontana, S. (1992). Uncoupling crystal-growth and nucleation in the deposition of diamond from the gas-phase. JOURNAL OF MATERIALS RESEARCH, 7(7), 1778-1787 [10.1111/j.1151-2916.1994.tb07095.x].

Uncoupling crystal-growth and nucleation in the deposition of diamond from the gas-phase

MOLINARI, ETTORE;POLINI, RICCARDO;TERRANOVA PERSICHELLI, MARIA LETIZIA;
1992-01-01

Abstract

Diamond deposits of well-separated particles have been obtained by the hot filament CVD technique on Si(100) wafers. Particle counting in SEM images and determination of their linear dimensions require a separate study of growth rates and of nucleation densities as a function of time, substrate temperature (500-degrees-C-950-degrees-C), gas phase composition (0.5-2% CH4 in H2), and total pressure (15-76 Torr). It is shown that recent models proposed for the growth process can successfully be applied if proper consideration is given to the high catalytic activity of the growing diamond surface for the heterogeneous recombination of gaseous H-atoms. This fast reaction controls the H-atom concentration at the surface and couples growth rates and nucleation densities via the gas phase.
1992
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore CHIM/03 - CHIMICA GENERALE E INORGANICA
English
Con Impact Factor ISI
DIAMOND; CVD; CHEMICAL VAPOR DEPOSITION; SILICON; NUCLEATION; GROWTH
Molinari, E., Polini, R., TERRANOVA PERSICHELLI, M.l., Ascarelli, P., Fontana, S. (1992). Uncoupling crystal-growth and nucleation in the deposition of diamond from the gas-phase. JOURNAL OF MATERIALS RESEARCH, 7(7), 1778-1787 [10.1111/j.1151-2916.1994.tb07095.x].
Molinari, E; Polini, R; TERRANOVA PERSICHELLI, Ml; Ascarelli, P; Fontana, S
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/44692
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