Well separated particles of diamond have been obtained on Si(100) surface by the hot filament chemical vapor deposition technique after scratching by diamond paste. Consecutive depositions, one at a higher and one at lower temperature, or at different CH4 contents of the gas mixture, together with a kinetic analysis based on the particle size distribution function, allow one to decide about the relative importance of heterogeneous nucleation and of seeding.
Molinari, E., Polini, R., Tomellini, M. (1992). Diamond crystallite formation on Si(100) from the gas phase: Seeding or heterogeneous nucleation. APPLIED PHYSICS LETTERS, 61(11), 1287-1289 [10.1063/1.107567].
Diamond crystallite formation on Si(100) from the gas phase: Seeding or heterogeneous nucleation
MOLINARI, ETTORE;POLINI, RICCARDO;TOMELLINI, MASSIMO
1992-01-01
Abstract
Well separated particles of diamond have been obtained on Si(100) surface by the hot filament chemical vapor deposition technique after scratching by diamond paste. Consecutive depositions, one at a higher and one at lower temperature, or at different CH4 contents of the gas mixture, together with a kinetic analysis based on the particle size distribution function, allow one to decide about the relative importance of heterogeneous nucleation and of seeding.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
