Optical transitions between surface states associated with dangling bonds in Si(111)2X1 have been measured by means of reflection anisotropy spectroscopy in the near infrared. The results confirm those previously obtained with other optical techniques (namely surface differential reflectivity and photothermal deflection spectroscopies). The method does not require oxidation of the surface and thus opens the way to studying a number of problems in surface physics, including the temperature dependence of surface transitions in Si(111)2x1 and Ge(111)2x1.
Goletti, C., Bussetti, G., Arciprete, F., Chiaradia, P., Chiarotti, G. (2002). Infrared surface absorption in Si(111)2x1 observed with reflectance anisotropy spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 66(15), 1533071-1533073.
Infrared surface absorption in Si(111)2x1 observed with reflectance anisotropy spectroscopy
GOLETTI, CLAUDIO;BUSSETTI, GIANLORENZO;ARCIPRETE, FABRIZIO;CHIAROTTI, GIANFRANCO
2002-01-01
Abstract
Optical transitions between surface states associated with dangling bonds in Si(111)2X1 have been measured by means of reflection anisotropy spectroscopy in the near infrared. The results confirm those previously obtained with other optical techniques (namely surface differential reflectivity and photothermal deflection spectroscopies). The method does not require oxidation of the surface and thus opens the way to studying a number of problems in surface physics, including the temperature dependence of surface transitions in Si(111)2x1 and Ge(111)2x1.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
