Active loads have been fabricated and tested, and their characterisation addressed for use in microwave CAD programs. The first results show that non-ideal (parasitic) effects are present that can easily be evaluated. Comparison with a three-terminal FET structure shows that a characterisation in terms of an equivalent circuit is feasible, and suggests a possible procedure for the extraction.

Giannini, F., Leuzzi, G., Serino, A. (1997). Charatterisation of active loads for MMIC’s. In GAAS 97, 5th european gallium arsenide and related III-V compounds applications symposium (pp.95-98).

Charatterisation of active loads for MMIC’s

GIANNINI, FRANCO;SERINO, ANTONIO
1997-09-01

Abstract

Active loads have been fabricated and tested, and their characterisation addressed for use in microwave CAD programs. The first results show that non-ideal (parasitic) effects are present that can easily be evaluated. Comparison with a three-terminal FET structure shows that a characterisation in terms of an equivalent circuit is feasible, and suggests a possible procedure for the extraction.
GAAS 97, 5th european gallium arsenide and related III-V compounds applications symposium
Bologna - Italia
1997
Rilevanza internazionale
set-1997
Settore ING-INF/01 - ELETTRONICA
English
Intervento a convegno
Giannini, F., Leuzzi, G., Serino, A. (1997). Charatterisation of active loads for MMIC’s. In GAAS 97, 5th european gallium arsenide and related III-V compounds applications symposium (pp.95-98).
Giannini, F; Leuzzi, G; Serino, A
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/42028
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