Active loads have been fabricated and tested, and their characterisation addressed for use in microwave CAD programs. The first results show that non-ideal (parasitic) effects are present that can easily be evaluated. Comparison with a three-terminal FET structure shows that a characterisation in terms of an equivalent circuit is feasible, and suggests a possible procedure for the extraction.
Giannini, F., Leuzzi, G., Serino, A. (1997). Charatterisation of active loads for MMIC’s. In GAAS 97, 5th european gallium arsenide and related III-V compounds applications symposium (pp.95-98).
Charatterisation of active loads for MMIC’s
GIANNINI, FRANCO;SERINO, ANTONIO
1997-09-01
Abstract
Active loads have been fabricated and tested, and their characterisation addressed for use in microwave CAD programs. The first results show that non-ideal (parasitic) effects are present that can easily be evaluated. Comparison with a three-terminal FET structure shows that a characterisation in terms of an equivalent circuit is feasible, and suggests a possible procedure for the extraction.File in questo prodotto:
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