We present a novel approach to engineer the growth of strained epitaxial films based on tailoring the elastic-interaction potential between nanostructures with substrate vicinality. By modeling the island-island interaction energy surface within continuum elasticity theory, we find that its fourfold symmetry is broken at high miscuts, producing directions of reduced elastic-interaction energy. As a consequence, it is possible to direct the Ge island growth on highly misoriented Si(001) substrates towards desired pathways.
Persichetti, L., Sgarlata, A., Fanfoni, M., Balzarotti, A. (2011). Breaking elastic field symmetry in the Ge/Si(001) growth with substrate vicinality. PHYSICAL REVIEW LETTERS, 106(5), 055503 [10.1103/PhysRevLett.106.055503].
Breaking elastic field symmetry in the Ge/Si(001) growth with substrate vicinality
Persichetti, L;SGARLATA, ANNA;FANFONI, MASSIMO;BALZAROTTI, ADALBERTO
2011-01-01
Abstract
We present a novel approach to engineer the growth of strained epitaxial films based on tailoring the elastic-interaction potential between nanostructures with substrate vicinality. By modeling the island-island interaction energy surface within continuum elasticity theory, we find that its fourfold symmetry is broken at high miscuts, producing directions of reduced elastic-interaction energy. As a consequence, it is possible to direct the Ge island growth on highly misoriented Si(001) substrates towards desired pathways.Questo articolo è pubblicato sotto una Licenza Licenza Creative Commons