A combined scanning tunneling microscopy and low-energy electron diffraction investigation of the Mn/GaAs(001) interface formation is reported. The interface, grown on a (2 4) reconstructed substrate produced by molecular beam epitaxy, was studied as a function of Mn evaporation with thickness ranging from 1/8 ML to 1 ML. The interaction of Mn atoms with the semiconductor surface is strong and leads to surface reconstructions involving a rearrangement of the two outmost atomic layers of the substrate. For Mn thickness lower than 1/2 ML, the surface is characterized by a (2 1) periodicity. Conversely, when the Mn deposition is increased to 1/2 ML the surface reconstruction is strongly dependent on the preparation procedure. If Mn deposition is performed on the substrate at 390 C, a fully ordered surface characterized by a clear (2 2) reconstruction is obtained, whereas, annealing the sample after Mn deposition, gives a disordered surface with a (2 1) symmetry. An intermediate phase between (2 1) and (2 2) is found for Mn depositions in between 1/4 and 1/2 ML. No further structural evolution was observed for both preparation methods above 1/2 ML coverage.

Colonna, S., Placidi, E., Ronci, F., Cricenti, A., Arciprete, F., Balzarotti, A. (2011). The role of kinetics on the Mn-induced reconstructions of the GaAs(001) surface. JOURNAL OF APPLIED PHYSICS, 109(12), 123522 [10.1063/1.3601518].

The role of kinetics on the Mn-induced reconstructions of the GaAs(001) surface

ARCIPRETE, FABRIZIO;BALZAROTTI, ADALBERTO
2011-06-23

Abstract

A combined scanning tunneling microscopy and low-energy electron diffraction investigation of the Mn/GaAs(001) interface formation is reported. The interface, grown on a (2 4) reconstructed substrate produced by molecular beam epitaxy, was studied as a function of Mn evaporation with thickness ranging from 1/8 ML to 1 ML. The interaction of Mn atoms with the semiconductor surface is strong and leads to surface reconstructions involving a rearrangement of the two outmost atomic layers of the substrate. For Mn thickness lower than 1/2 ML, the surface is characterized by a (2 1) periodicity. Conversely, when the Mn deposition is increased to 1/2 ML the surface reconstruction is strongly dependent on the preparation procedure. If Mn deposition is performed on the substrate at 390 C, a fully ordered surface characterized by a clear (2 2) reconstruction is obtained, whereas, annealing the sample after Mn deposition, gives a disordered surface with a (2 1) symmetry. An intermediate phase between (2 1) and (2 2) is found for Mn depositions in between 1/4 and 1/2 ML. No further structural evolution was observed for both preparation methods above 1/2 ML coverage.
23-giu-2011
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore FIS/03 - FISICA DELLA MATERIA
English
Con Impact Factor ISI
http://scitation.aip.org/content/aip/journal/jap/109/12/10.1063/1.3601518
Colonna, S., Placidi, E., Ronci, F., Cricenti, A., Arciprete, F., Balzarotti, A. (2011). The role of kinetics on the Mn-induced reconstructions of the GaAs(001) surface. JOURNAL OF APPLIED PHYSICS, 109(12), 123522 [10.1063/1.3601518].
Colonna, S; Placidi, E; Ronci, F; Cricenti, A; Arciprete, F; Balzarotti, A
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/40966
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