In this article, the design, fabrication, and on-wafer test of X-Band and 2-18 GHz wideband high-power SPDT MMIC switches in AlGaN/GaN technology are presented. The switches have demonstrated state-of-the-art performance and RF fabrication yield better than 65%. Linear and power measurements for different control voltages have been reported and an explanation of the dependence of the power performances on the control voltage is given. In particular, the X-band switch exhibits a 0.4 dB compression level at 10 GHz when driven by a 38 dBm input signal. The wideband switch shows a compression level of 1 dB at an input drive higher than 38 dBm across the entire bandwidth. (C) 2009 Wiley Periodicals, Inc. Int J RF and Microwave CAE 19: 598-606, 2009.
Bettidi, A., Cetronio, A., Ciccognani, W., De Dominicis, M., Lanzieri, C., Limiti, E., et al. (2009). High power GaN-HEMT SPDT switches for Microwave applications. INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 19(5), 598-606 [10.1002/mmce.20383].
High power GaN-HEMT SPDT switches for Microwave applications
CICCOGNANI, WALTER;LIMITI, ERNESTO;
2009-09-01
Abstract
In this article, the design, fabrication, and on-wafer test of X-Band and 2-18 GHz wideband high-power SPDT MMIC switches in AlGaN/GaN technology are presented. The switches have demonstrated state-of-the-art performance and RF fabrication yield better than 65%. Linear and power measurements for different control voltages have been reported and an explanation of the dependence of the power performances on the control voltage is given. In particular, the X-band switch exhibits a 0.4 dB compression level at 10 GHz when driven by a 38 dBm input signal. The wideband switch shows a compression level of 1 dB at an input drive higher than 38 dBm across the entire bandwidth. (C) 2009 Wiley Periodicals, Inc. Int J RF and Microwave CAE 19: 598-606, 2009.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
