The design, fabrication and test of X-band high-power monolithic SPDT switches in microstrip GaN technology Lire presented. Such switches have demonstrated state-of-the-art performance: they exhibit I dB on-state insertion loss and better than 37 dB isolation. power-handling measurements have shown that no compression phenomenon occurs with an input power equal to 39.5 dBm at 10 GHz.

Ciccognani, W., De Dominicis, M., Ferrari, M., Limiti, E., Peroni, M., Romanini, P. (2008). High-power monolithic AlGaN/GaN HEMT switch for X-band applications. ELECTRONICS LETTERS, 44(15), 911-913 [10.1049/el:20081170].

High-power monolithic AlGaN/GaN HEMT switch for X-band applications

CICCOGNANI, WALTER;LIMITI, ERNESTO;
2008-07-01

Abstract

The design, fabrication and test of X-band high-power monolithic SPDT switches in microstrip GaN technology Lire presented. Such switches have demonstrated state-of-the-art performance: they exhibit I dB on-state insertion loss and better than 37 dB isolation. power-handling measurements have shown that no compression phenomenon occurs with an input power equal to 39.5 dBm at 10 GHz.
lug-2008
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore ING-INF/01 - ELETTRONICA
English
Con Impact Factor ISI
Gallium nitride; Optical design; Semiconducting gallium; AlGaN/GaN HEMT; Compression phenomenon; High powers; Input powers; Microstrip (MSL); SPDT switches; State of the art performance; Switches
Ciccognani, W., De Dominicis, M., Ferrari, M., Limiti, E., Peroni, M., Romanini, P. (2008). High-power monolithic AlGaN/GaN HEMT switch for X-band applications. ELECTRONICS LETTERS, 44(15), 911-913 [10.1049/el:20081170].
Ciccognani, W; De Dominicis, M; Ferrari, M; Limiti, E; Peroni, M; Romanini, P
Articolo su rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/37722
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