We studied the temperature dependence of the two-dimensional to three-dimensional growth transition in InAs/GaAs(001) heteroepitaxy by means of reflection high energy electron diffraction and atomic force microscopy. The observed shift of the transition to higher InAs deposition times, at temperatures above 500 degrees C, is not a change of critical thickness for islanding, which instead, is constant in the 450-560 degrees C range. Consequently, In-Ga intermixing and surface and interface strain have a negligible dependence on temperature in this range.
Patella, F., Arciprete, F., Fanfoni, M., Balzarotti, A., Placidi, E. (2006). Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001). APPLIED PHYSICS LETTERS, 88(16) [10.1063/1.2189915].
Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001)
PATELLA, FULVIA;ARCIPRETE, FABRIZIO;FANFONI, MASSIMO;BALZAROTTI, ADALBERTO;
2006-01-01
Abstract
We studied the temperature dependence of the two-dimensional to three-dimensional growth transition in InAs/GaAs(001) heteroepitaxy by means of reflection high energy electron diffraction and atomic force microscopy. The observed shift of the transition to higher InAs deposition times, at temperatures above 500 degrees C, is not a change of critical thickness for islanding, which instead, is constant in the 450-560 degrees C range. Consequently, In-Ga intermixing and surface and interface strain have a negligible dependence on temperature in this range.Questo articolo è pubblicato sotto una Licenza Licenza Creative Commons
