We have followed by reflection high-energy electron diffraction the nucleation of InAs quantum dots on GaAs(001), grown by molecular-beam epitaxy with growth interruptions. Surface mass transport gives rise, at the critical InAs thickness, to a huge nucleation of three-dimensional islands within 0.2 monolayers (ML). Such surface mass diffusion has been evidenced by observing the transition of the reflection high-energy electron diffraction pattern from two- to three-dimensional during the growth interruption after the deposition of 1.59 ML of InAs. It is suggested that the process is driven by the As-2 adsorption-desorption process and by the lowering of the In binding energy due to compressive strain. The last condition is met first in the region surrounding dots at step edges where nucleation predominantly occurs. (c) 2005 American Institute of Physics.

Patella, F., Arciprete, F., Fanfoni, M., Sessi, V., Balzarotti, A., Placidi, E. (2005). Reflection high energy electron diffraction observation of surface mass transport at the two- to three-dimensional growth transition of InAs on GaAs(001). APPLIED PHYSICS LETTERS, 87(25), 1-3 [10.1063/1.2147731].

Reflection high energy electron diffraction observation of surface mass transport at the two- to three-dimensional growth transition of InAs on GaAs(001)

PATELLA, FULVIA;ARCIPRETE, FABRIZIO;FANFONI, MASSIMO;BALZAROTTI, ADALBERTO;
2005-01-01

Abstract

We have followed by reflection high-energy electron diffraction the nucleation of InAs quantum dots on GaAs(001), grown by molecular-beam epitaxy with growth interruptions. Surface mass transport gives rise, at the critical InAs thickness, to a huge nucleation of three-dimensional islands within 0.2 monolayers (ML). Such surface mass diffusion has been evidenced by observing the transition of the reflection high-energy electron diffraction pattern from two- to three-dimensional during the growth interruption after the deposition of 1.59 ML of InAs. It is suggested that the process is driven by the As-2 adsorption-desorption process and by the lowering of the In binding energy due to compressive strain. The last condition is met first in the region surrounding dots at step edges where nucleation predominantly occurs. (c) 2005 American Institute of Physics.
2005
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore FIS/03 - FISICA DELLA MATERIA
English
Con Impact Factor ISI
Mass transfer; Molecular beam epitaxy; Monolayers; Nucleation; Semiconducting indium; Semiconductor growth; Semiconductor quantum dots; Surface phenomena; Adsorption-desorption processes; Compressive strains; Surface mass diffusion; Surface mass transport; Reflection high energy electron diffraction
Patella, F., Arciprete, F., Fanfoni, M., Sessi, V., Balzarotti, A., Placidi, E. (2005). Reflection high energy electron diffraction observation of surface mass transport at the two- to three-dimensional growth transition of InAs on GaAs(001). APPLIED PHYSICS LETTERS, 87(25), 1-3 [10.1063/1.2147731].
Patella, F; Arciprete, F; Fanfoni, M; Sessi, V; Balzarotti, A; Placidi, E
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/37022
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