We have analysed by atomic force microscopy the InAs on GaAs(001) system prepared by molecular beam epitaxy. Subsequent stages of the heteroepitaxial growth have been investigated starting from the initial formation of the strained two-dimensional wetting layer up to the growth of three-dimensional self-assembled quantum dots. In particular, we report on the structural characterization near the critical thickness and discuss the role of different features that influence the morphology of InAs quantum dots.
Nufris, S., Arciprete, F., Patella, F., Placidi, E., Fanfoni, M., Sgarlata, A., et al. (2004). Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth. In Institute Physics Conference Series (pp.195-198).
Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth
ARCIPRETE, FABRIZIO;PATELLA, FULVIA;FANFONI, MASSIMO;SGARLATA, ANNA;BALZAROTTI, ADALBERTO
2004-01-01
Abstract
We have analysed by atomic force microscopy the InAs on GaAs(001) system prepared by molecular beam epitaxy. Subsequent stages of the heteroepitaxial growth have been investigated starting from the initial formation of the strained two-dimensional wetting layer up to the growth of three-dimensional self-assembled quantum dots. In particular, we report on the structural characterization near the critical thickness and discuss the role of different features that influence the morphology of InAs quantum dots.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
