We have clearly evidenced the contribution of true surface states, in the range 1.8-2.5 eV, to the optical anisotropy of the GaAs(001)2X4 surface grown in situ by molecular beam epitaxy. These spectral features are well below the photon energy (2.9 eV) where bulklike anisotropies appear in coincidence with the Et bulk critical point. The surface character is established by studying the evolution of the reflectance anisotropy spectroscopy spectra versus oxygen exposure. The interpretation is strengthened by comparison with high-resolution electron-energy-loss spectra measured on the same surface and by first-principles density-functional theory calculations.

Arciprete, F., Goletti, C., Placidi, E., Hogan, C., Chiaradia, P., Fanfoni, M., et al. (2004). Surface states at the GaAs(001)2X4 surface. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 69(8), 813081-813084 [10.1103/PhysRevB.69.081308].

Surface states at the GaAs(001)2X4 surface

ARCIPRETE, FABRIZIO;GOLETTI, CLAUDIO;CHIARADIA, PIETRO;FANFONI, MASSIMO;PATELLA, FULVIA;BALZAROTTI, ADALBERTO
2004-01-01

Abstract

We have clearly evidenced the contribution of true surface states, in the range 1.8-2.5 eV, to the optical anisotropy of the GaAs(001)2X4 surface grown in situ by molecular beam epitaxy. These spectral features are well below the photon energy (2.9 eV) where bulklike anisotropies appear in coincidence with the Et bulk critical point. The surface character is established by studying the evolution of the reflectance anisotropy spectroscopy spectra versus oxygen exposure. The interpretation is strengthened by comparison with high-resolution electron-energy-loss spectra measured on the same surface and by first-principles density-functional theory calculations.
2004
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore FIS/03 - FISICA DELLA MATERIA
English
Con Impact Factor ISI
gallium arsenide; anisotropy; article; density functional theory; electron energy loss spectroscopy; photon; spectroscopy; surface property
Arciprete, F., Goletti, C., Placidi, E., Hogan, C., Chiaradia, P., Fanfoni, M., et al. (2004). Surface states at the GaAs(001)2X4 surface. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 69(8), 813081-813084 [10.1103/PhysRevB.69.081308].
Arciprete, F; Goletti, C; Placidi, E; Hogan, C; Chiaradia, P; Fanfoni, M; Patella, F; Balzarotti, A
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/31164
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