Using first-principles methods, we investigate the structural and electronic properties of SiGe nanowires-based heterostructures, whose lattice contains the same number of Si and Ge atoms but arranged in a different manner. Our results demonstrate that the wires with a clear interface between Si and Ge regions not only form the most stable structures but show a strongly reduced quantum confinement effect. Moreover, we, with the inclusion of many-body effects, prove that these nanowires-under optical excitation-display a clear electron-hole separation property which can have relevant technological applications.

Amato, M., Palummo, M., Ossicini, S. (2009). Reduced quantum confinement effect and electron-hole separation in SiGe nanowires. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 79(20), 201302 [10.1103/PhysRevB.79.201302].

Reduced quantum confinement effect and electron-hole separation in SiGe nanowires

PALUMMO, MAURIZIA;
2009-01-01

Abstract

Using first-principles methods, we investigate the structural and electronic properties of SiGe nanowires-based heterostructures, whose lattice contains the same number of Si and Ge atoms but arranged in a different manner. Our results demonstrate that the wires with a clear interface between Si and Ge regions not only form the most stable structures but show a strongly reduced quantum confinement effect. Moreover, we, with the inclusion of many-body effects, prove that these nanowires-under optical excitation-display a clear electron-hole separation property which can have relevant technological applications.
2009
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore FIS/03 - FISICA DELLA MATERIA
English
Con Impact Factor ISI
ab initio calculations; Ge-Si alloys; nanowires; semiconductor materials; semiconductor quantum wires
Amato, M., Palummo, M., Ossicini, S. (2009). Reduced quantum confinement effect and electron-hole separation in SiGe nanowires. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 79(20), 201302 [10.1103/PhysRevB.79.201302].
Amato, M; Palummo, M; Ossicini, S
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/30588
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