The growth process of molecular thin films deposited on an interacting crystalline substrate by organic molecular-beam epitaxy is monitored in situ by reflectance anisotropy spectroscopy (RAS). From the RAS signal evolution measured during the early stages of deposition, evidence is found of two opposite growth modes, namely layer-by-layer and island modes, obtained when changing the supersaturation of the vapor phase on the substrate.

Sassella, A., Campione, M., Moret, M., Borghesi, A., Goletti, C., Bussetti, G., et al. (2005). Tuning the growth mode in organic molecular-beam epitaxy. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 71(20) [10.1103/PhysRevB.71.201311].

Tuning the growth mode in organic molecular-beam epitaxy

GOLETTI, CLAUDIO;BUSSETTI, GIANLORENZO;CHIARADIA, PIETRO
2005-01-01

Abstract

The growth process of molecular thin films deposited on an interacting crystalline substrate by organic molecular-beam epitaxy is monitored in situ by reflectance anisotropy spectroscopy (RAS). From the RAS signal evolution measured during the early stages of deposition, evidence is found of two opposite growth modes, namely layer-by-layer and island modes, obtained when changing the supersaturation of the vapor phase on the substrate.
2005
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore FIS/03 - FISICA DELLA MATERIA
English
Con Impact Factor ISI
THIN-FILMS; DEPOSITION; QUATERTHIOPHENE; SPECTROSCOPY; ANISOTROPY; SURFACES; CRYSTAL; SPECTRA
Sassella, A., Campione, M., Moret, M., Borghesi, A., Goletti, C., Bussetti, G., et al. (2005). Tuning the growth mode in organic molecular-beam epitaxy. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 71(20) [10.1103/PhysRevB.71.201311].
Sassella, A; Campione, M; Moret, M; Borghesi, A; Goletti, C; Bussetti, G; Chiaradia, P
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/30527
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