In this article, the minimization of asymmetry between lower and upper side band intermodulation products is discussed. Base-band and harmonics termination effects are analyzed by means of a Volterra Series approach, identifying novel conditions to minimize IMD asymmetry and IM3 power levels. The new inferred conditions do not involve base-band terminations, but harmonic load conditions. The proposed criteria are experimentally validated through harmonic load-pull measurements performed on a GaN HEMT under two-tone excitation. The resulting measurements are in agreement with the forecasted analysis results, showing an IMD asymmetry minimization, with a remarkable increase in C/I-3 of 6 dBc, without affecting the output power (34 dBm) and power added efficiency (65%) levels attained at I dB compression point. (C) 2008 Wiley Periodicals, Inc. Int J RF and Microwave CAE 18: 527-535, 2008.
Colantonio, P., Giannini, F., Limiti, E., Nanni, A., Camarchia, V., Teppati, V., et al. (2008). Design approach to improve linearity and power performance of microwave FETs. INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 18(6), 527-535 [10.1002/mmce.20328].
Design approach to improve linearity and power performance of microwave FETs
COLANTONIO, PAOLO;GIANNINI, FRANCO;LIMITI, ERNESTO;
2008-11-01
Abstract
In this article, the minimization of asymmetry between lower and upper side band intermodulation products is discussed. Base-band and harmonics termination effects are analyzed by means of a Volterra Series approach, identifying novel conditions to minimize IMD asymmetry and IM3 power levels. The new inferred conditions do not involve base-band terminations, but harmonic load conditions. The proposed criteria are experimentally validated through harmonic load-pull measurements performed on a GaN HEMT under two-tone excitation. The resulting measurements are in agreement with the forecasted analysis results, showing an IMD asymmetry minimization, with a remarkable increase in C/I-3 of 6 dBc, without affecting the output power (34 dBm) and power added efficiency (65%) levels attained at I dB compression point. (C) 2008 Wiley Periodicals, Inc. Int J RF and Microwave CAE 18: 527-535, 2008.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
