The experimental results of an ultra-wideband high-efficiency power amplifier (PA) in GaN technology are presented. The active device is a HEMT with 1 mm of gate periphery. The realised PA operates from 0.8 to 4 GHz, showing a drain efficiency greater than 40% with an output power higher than 32 dBm in the overall bandwidth.
Colantonio, P., Giannini, F., Giofre', R., Piazzon, L. (2008). High-efficiency ultra-wideband power amplifier in GaN technology. ELECTRONICS LETTERS, 44(2), 130-131 [10.1049/el:20083067].
High-efficiency ultra-wideband power amplifier in GaN technology
COLANTONIO, PAOLO;GIANNINI, FRANCO;GIOFRE', ROCCO;PIAZZON, LUCA
2008-01-01
Abstract
The experimental results of an ultra-wideband high-efficiency power amplifier (PA) in GaN technology are presented. The active device is a HEMT with 1 mm of gate periphery. The realised PA operates from 0.8 to 4 GHz, showing a drain efficiency greater than 40% with an output power higher than 32 dBm in the overall bandwidth.File in questo prodotto:
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