The study of the early stage of Mn growth on GaAs(001)- c(4 4) surface has been performed by in situ Scanning Tunneling Microscopy and X-ray Photoelectron Spectroscopy. Starting from GaAs(001) grown by molecular beam epitaxy, the surface was investigated after Mn deposition and after low temperature annealing at about 250 C. The aim of this work is to understand the mechanism of Mn As interaction and the behavior ofMnon the GaAs(001) substrate. The results demonstrate the high reactivity and mobility of Mn with the formation of compounds such as Mn subarsenide .MnAsx/, MnAs (confirmed by STM results) and, probably, GaMnAs.
Thorpe, S., Arciprete, F., Placidi, E., Patella, F., Fanfoni, M., Balzarotti, A., et al. (2009). XPS and STM study of Mn incorporation on the GaAs(001) surface. In Superlattices and Microstructures (pp.258-265). LONDON : ACADEMIC PRESS LTD ELSEVIER SCIENCE LTD [10.1016/j.spmi.2008.12.021].
XPS and STM study of Mn incorporation on the GaAs(001) surface
ARCIPRETE, FABRIZIO;PATELLA, FULVIA;FANFONI, MASSIMO;BALZAROTTI, ADALBERTO;
2009-01-01
Abstract
The study of the early stage of Mn growth on GaAs(001)- c(4 4) surface has been performed by in situ Scanning Tunneling Microscopy and X-ray Photoelectron Spectroscopy. Starting from GaAs(001) grown by molecular beam epitaxy, the surface was investigated after Mn deposition and after low temperature annealing at about 250 C. The aim of this work is to understand the mechanism of Mn As interaction and the behavior ofMnon the GaAs(001) substrate. The results demonstrate the high reactivity and mobility of Mn with the formation of compounds such as Mn subarsenide .MnAsx/, MnAs (confirmed by STM results) and, probably, GaMnAs.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
