The preparation of composite layers made of porous silicon (PS) infiltrated with nanostructured carbon is reported. These composite layers were obtained by chemical vapor infiltration (CVI) of mesoporous silicon under process conditions normally employed to grow diamond films by Hot Filament Chemical Vapour Deposition (HFCVD). Micro-Raman spectroscopy and Field Emission Gun Scanning Electron Microscopy (FEG-SEM) techniques showed that diamond nucleation density was very low whilst sp(2) carbon permeated completely, even after 1 h deposition, the thickness of the PS layers that preserved their mesoporous columnar structure.

Polini, R., Valentini, V., Mattei, G. (2009). Nanostructured sp(2)-Carbon Infiltration of Mesoporous Silicon Layers. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 9(6), 3927-3931 [10.1166/jnn.2009.NS91].

Nanostructured sp(2)-Carbon Infiltration of Mesoporous Silicon Layers

POLINI, RICCARDO;
2009-01-01

Abstract

The preparation of composite layers made of porous silicon (PS) infiltrated with nanostructured carbon is reported. These composite layers were obtained by chemical vapor infiltration (CVI) of mesoporous silicon under process conditions normally employed to grow diamond films by Hot Filament Chemical Vapour Deposition (HFCVD). Micro-Raman spectroscopy and Field Emission Gun Scanning Electron Microscopy (FEG-SEM) techniques showed that diamond nucleation density was very low whilst sp(2) carbon permeated completely, even after 1 h deposition, the thickness of the PS layers that preserved their mesoporous columnar structure.
2009
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore CHIM/03 - CHIMICA GENERALE E INORGANICA
Settore ING-IND/22 - SCIENZA E TECNOLOGIA DEI MATERIALI
English
Con Impact Factor ISI
Chemical vapor infiltration; Electron microscopy; Nanostructured carbon; Porous silicon; Raman spectroscopy
Chemical vapor infiltration; Electron microscopy; Nanostructured carbon; Porous silicon; Raman spectroscopy
Polini, R., Valentini, V., Mattei, G. (2009). Nanostructured sp(2)-Carbon Infiltration of Mesoporous Silicon Layers. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 9(6), 3927-3931 [10.1166/jnn.2009.NS91].
Polini, R; Valentini, V; Mattei, G
Articolo su rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/26168
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