The search for semiconducting materials with improved optical properties relies on the possibility to manipulate the semiconductors band structure by using quantum confinement, strain effects, and by the addition of diluted amounts of impurity elements such as Bi. In this study, we explore the possibility to engineer the structural and physical properties of the Ga(As, Bi) alloy by employing different stress conditions in its epitaxial growth. Films with variable concentration of Bi are grown by molecular beam epitaxy on bare GaAs(001) crystals and on partially relaxed (In, Ga)As double buffer layers acting as stressors aiming to control the Bi incorporation into the alloy and improving the optical properties in terms of efficiency. A combination of several structural and electronic characterization techniques and dedicated density-functional-theory calculations allows us a systematic comparison between the samples grown under compressive and tensile strain. We demonstrate the possibility to grow Ga(As, Bi) under different strain conditions without affecting its crystal quality. The different strain conditions strongly impact the Bi incorporation in the GaAs matrix and the luminescence properties of the sample. We find (i) a striking improvement of the photoluminescence with a strongly increased radiative efficiency when Ga(As, Bi) is grown under tensile strain and (ii) an interesting higher redshift with respect to Ga(As, Bi) grown compressively on GaAs. These two effects allow us to reach the important photoluminescence emission at 1.3 mu m with a Bi concentration as low as 4.9% compared to 7.5% needed for samples grown directly on GaAs. This is a significant achievement for the application of the Ga(As, Bi) material in optoelectronic devices.

Tisbi, E., Placidi, E., Magri, R., Prosposito, P., Francini, R., Zaganelli, A., et al. (2020). Increasing optical efficiency in the telecommunication bands of strain-engineered Ga(As, Bi) alloys. PHYSICAL REVIEW APPLIED, 14(1), 014028 [10.1103/PhysRevApplied.14.014028].

Increasing optical efficiency in the telecommunication bands of strain-engineered Ga(As, Bi) alloys

Tisbi, E;Prosposito, P;Francini, R;Arciprete, F
2020-07-10

Abstract

The search for semiconducting materials with improved optical properties relies on the possibility to manipulate the semiconductors band structure by using quantum confinement, strain effects, and by the addition of diluted amounts of impurity elements such as Bi. In this study, we explore the possibility to engineer the structural and physical properties of the Ga(As, Bi) alloy by employing different stress conditions in its epitaxial growth. Films with variable concentration of Bi are grown by molecular beam epitaxy on bare GaAs(001) crystals and on partially relaxed (In, Ga)As double buffer layers acting as stressors aiming to control the Bi incorporation into the alloy and improving the optical properties in terms of efficiency. A combination of several structural and electronic characterization techniques and dedicated density-functional-theory calculations allows us a systematic comparison between the samples grown under compressive and tensile strain. We demonstrate the possibility to grow Ga(As, Bi) under different strain conditions without affecting its crystal quality. The different strain conditions strongly impact the Bi incorporation in the GaAs matrix and the luminescence properties of the sample. We find (i) a striking improvement of the photoluminescence with a strongly increased radiative efficiency when Ga(As, Bi) is grown under tensile strain and (ii) an interesting higher redshift with respect to Ga(As, Bi) grown compressively on GaAs. These two effects allow us to reach the important photoluminescence emission at 1.3 mu m with a Bi concentration as low as 4.9% compared to 7.5% needed for samples grown directly on GaAs. This is a significant achievement for the application of the Ga(As, Bi) material in optoelectronic devices.
10-lug-2020
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/03 - FISICA DELLA MATERIA
English
https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.14.014028
Tisbi, E., Placidi, E., Magri, R., Prosposito, P., Francini, R., Zaganelli, A., et al. (2020). Increasing optical efficiency in the telecommunication bands of strain-engineered Ga(As, Bi) alloys. PHYSICAL REVIEW APPLIED, 14(1), 014028 [10.1103/PhysRevApplied.14.014028].
Tisbi, E; Placidi, E; Magri, R; Prosposito, P; Francini, R; Zaganelli, A; Cecchi, S; Zallo, E; Calarco, R; Luna, E; Honolka, J; Vondracek, M; Colonna, S; Arciprete, F
Articolo su rivista
File in questo prodotto:
File Dimensione Formato  
PhysRevApplied.14.014028.pdf

solo utenti autorizzati

Descrizione: Articolo principale
Tipologia: Versione Editoriale (PDF)
Licenza: Copyright dell'editore
Dimensione 4.76 MB
Formato Adobe PDF
4.76 MB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/259834
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 8
  • ???jsp.display-item.citation.isi??? 9
social impact