We present a joint experimental and theoretical study of the electronic properties of the rebonded-step reconstructed Ge/Si(1 0 5) surface which is the main strained face found on Ge/Si(0 0 1) quantum dots and is considered a prototypical model system for surface strain relaxation in heteroepitaxial growth. Using a vicinal surface as a model system for obtaining a stable single-domain film structure with large terraces and rebonded-step surface termination, we realized an extended and ordered Ge/Si planar hetero-junction suitable for direct study with angle-resolved photoemission spectroscopy. At the coverage of four Ge monolayers photoemission spectroscopy reveals the presence of 2D surface and film bands displaying energy-momentum dispersion compatible with the 5 × 4 periodicity of the system. The good agreement between experiment and first-principles electronic structure calculations confirms the validity of the rebonded-step structural model. The direct observation of surface features within 1 eV below the valence band maximum corroborates previously reported analysis of the electronic and optical behavior of the Ge/Si hetero-interface.

Sheverdyaeva, P.m., Hogan, C., Sgarlata, A., Fazi, L., Fanfoni, M., Persichetti, L., et al. (2018). Electronic structure of the Ge/Si(1 0 5) hetero-interface: An ARPES and DFT study. JOURNAL OF PHYSICS. CONDENSED MATTER, 30(46), 465502 [10.1088/1361-648X/aae66f].

Electronic structure of the Ge/Si(1 0 5) hetero-interface: An ARPES and DFT study

Sgarlata, A.;Fazi, L.;Fanfoni, M.;Persichetti, L.
Membro del Collaboration Group
;
Balzarotti, A.
2018-01-01

Abstract

We present a joint experimental and theoretical study of the electronic properties of the rebonded-step reconstructed Ge/Si(1 0 5) surface which is the main strained face found on Ge/Si(0 0 1) quantum dots and is considered a prototypical model system for surface strain relaxation in heteroepitaxial growth. Using a vicinal surface as a model system for obtaining a stable single-domain film structure with large terraces and rebonded-step surface termination, we realized an extended and ordered Ge/Si planar hetero-junction suitable for direct study with angle-resolved photoemission spectroscopy. At the coverage of four Ge monolayers photoemission spectroscopy reveals the presence of 2D surface and film bands displaying energy-momentum dispersion compatible with the 5 × 4 periodicity of the system. The good agreement between experiment and first-principles electronic structure calculations confirms the validity of the rebonded-step structural model. The direct observation of surface features within 1 eV below the valence band maximum corroborates previously reported analysis of the electronic and optical behavior of the Ge/Si hetero-interface.
2018
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/03 - FISICA DELLA MATERIA
English
ARPES; electronic structure; germanium; RS reconstruction; silicon; vicinal surface; Materials Science (all); Condensed Matter Physics
http://iopscience.iop.org/article/10.1088/1361-648X/aae66f/pdf
Sheverdyaeva, P.m., Hogan, C., Sgarlata, A., Fazi, L., Fanfoni, M., Persichetti, L., et al. (2018). Electronic structure of the Ge/Si(1 0 5) hetero-interface: An ARPES and DFT study. JOURNAL OF PHYSICS. CONDENSED MATTER, 30(46), 465502 [10.1088/1361-648X/aae66f].
Sheverdyaeva, Pm; Hogan, C; Sgarlata, A; Fazi, L; Fanfoni, M; Persichetti, L; Moras, P; Balzarotti, A
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/207616
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