This paper presents the design of a Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) for S-band active radar systems. The circuit, fabricated in a 0.25 um Gallium Nitride (GaN), is based on a three-stage architecture with the final one conceived to work in class F configuration to maximize the efficiency. In a bandwidth of 400 MHz, the MMIC delivers an output power of 50W with an associated gain and power added efficiency higher than 34dB and 55%, respectively. The overall chip area is 6x5 mm2.
Costanzo, F., Giofre', R., Colantonio, P., Limiti, E. (2018). A 50W GaN MMIC Power Amplifier for S-Band Radar Systems. INTERNATIONAL JOURNAL OF MICROWAVE AND OPTICAL TECHNOLOGY, 13(2), 126-131.
A 50W GaN MMIC Power Amplifier for S-Band Radar Systems
Ferdinando Costanzo;Rocco Giofrè;Paolo Colantonio;Ernesto Limiti
2018-03-05
Abstract
This paper presents the design of a Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) for S-band active radar systems. The circuit, fabricated in a 0.25 um Gallium Nitride (GaN), is based on a three-stage architecture with the final one conceived to work in class F configuration to maximize the efficiency. In a bandwidth of 400 MHz, the MMIC delivers an output power of 50W with an associated gain and power added efficiency higher than 34dB and 55%, respectively. The overall chip area is 6x5 mm2.| File | Dimensione | Formato | |
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