Classical Series-Shunt and T-shape SPDTs provide an isolation degrading in frequency which, to be adequately counteracted, may require high-value (and, therefore, large-size) resonating inductors. In this contribution, a resistive bias network is added to a T-shape SPDT instead of introducing inductors. A derived analytical description evidences that the maximum isolation can be shifted in frequency by selecting the proper resistive values. Such an architecture offers high isolation values and, at the same time, considerable area savings as compared to the inductor-based approach. A test circuit operating in S-Band was designed and a 72 dB isolation was achieved, as well as a return loss of about 20 dB.

Polli, G., Palomba, M., Colangeli, S., Salvucci, A., Limiti, E. (2016). Resistive bias network for optimized isolation in SPDT switches. In Proceedings of the 21th International Conference on Microwave, Radar and Wireless Communications (pp.1-4). IEEE [10.1109/MIKON.2016.7491949].

Resistive bias network for optimized isolation in SPDT switches

POLLI, GIORGIO;PALOMBA, MIRKO;COLANGELI, SERGIO;SALVUCCI, ALESSANDRO;LIMITI, ERNESTO
2016-01-01

Abstract

Classical Series-Shunt and T-shape SPDTs provide an isolation degrading in frequency which, to be adequately counteracted, may require high-value (and, therefore, large-size) resonating inductors. In this contribution, a resistive bias network is added to a T-shape SPDT instead of introducing inductors. A derived analytical description evidences that the maximum isolation can be shifted in frequency by selecting the proper resistive values. Such an architecture offers high isolation values and, at the same time, considerable area savings as compared to the inductor-based approach. A test circuit operating in S-Band was designed and a 72 dB isolation was achieved, as well as a return loss of about 20 dB.
21st International Conference on Microwave, Radar and Wireless Communications, MIKON 2016
pol
2016
Rilevanza internazionale
contributo
2016
2016
Settore ING-INF/01 - ELETTRONICA
English
Bias; High-isolation; Resistive; SPDT; Switch;
High-isolation; switch; SPDT; resistive; bias
Intervento a convegno
Polli, G., Palomba, M., Colangeli, S., Salvucci, A., Limiti, E. (2016). Resistive bias network for optimized isolation in SPDT switches. In Proceedings of the 21th International Conference on Microwave, Radar and Wireless Communications (pp.1-4). IEEE [10.1109/MIKON.2016.7491949].
Polli, G; Palomba, M; Colangeli, S; Salvucci, A; Limiti, E
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/180501
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