The extraordinary properties of graphene have spurred huge interest in the experimental realization of a two-dimensional honeycomb lattice of silicon, namely, silicene. However, its synthesis on supporting substrates remains a challenging issue. Recently, strong doubts against the possibility of synthesizing silicene on metallic substrates have been brought forward because of the non-negligible interaction between silicon and metal atoms. To solve the growth problems, we directly deposited silicon on a chemically inert graphite substrate at room temperature. Based on atomic force microscopy, scanning tunneling microscopy, and ab initio molecular dynamics simulations, we reveal the growth of silicon nanosheets where the substrate-silicon interaction is minimized. Scanning tunneling microscopy measurements clearly display the atomically resolved unit cell and the small buckling of the silicene honeycomb structure. Similar to the carbon atoms in graphene, each of the silicon atoms has three nearest and six second nearest neighbors, thus demonstrating its dominant sp(2) configuration. Our scanning tunneling spectroscopy investigations confirm the metallic character of the deposited silicene, in excellent agreement with our band structure calculations that also exhibit the presence of a Dirac cone.

DE CRESCENZI, M., Berbezier, I., Scarselli, M.a., Castrucci, P., Abbarchi, M., Ronda, A., et al. (2016). Formation of Silicene Nanosheets on Graphite. ACS NANO, 10(12), 11163-11171 [10.1021/acsnano.6b06198].

Formation of Silicene Nanosheets on Graphite

DE CRESCENZI, MAURIZIO;SCARSELLI, MANUELA ANGELA;CASTRUCCI, PAOLA;
2016-11-01

Abstract

The extraordinary properties of graphene have spurred huge interest in the experimental realization of a two-dimensional honeycomb lattice of silicon, namely, silicene. However, its synthesis on supporting substrates remains a challenging issue. Recently, strong doubts against the possibility of synthesizing silicene on metallic substrates have been brought forward because of the non-negligible interaction between silicon and metal atoms. To solve the growth problems, we directly deposited silicon on a chemically inert graphite substrate at room temperature. Based on atomic force microscopy, scanning tunneling microscopy, and ab initio molecular dynamics simulations, we reveal the growth of silicon nanosheets where the substrate-silicon interaction is minimized. Scanning tunneling microscopy measurements clearly display the atomically resolved unit cell and the small buckling of the silicene honeycomb structure. Similar to the carbon atoms in graphene, each of the silicon atoms has three nearest and six second nearest neighbors, thus demonstrating its dominant sp(2) configuration. Our scanning tunneling spectroscopy investigations confirm the metallic character of the deposited silicene, in excellent agreement with our band structure calculations that also exhibit the presence of a Dirac cone.
nov-2016
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/03 - FISICA DELLA MATERIA
English
Con Impact Factor ISI
2D nanomaterials; ab initio molecular dynamics simulations; density functional theory; electronic density of states measurement and calculations; scanning tunneling microscopy; silicene; silicon growth
DE CRESCENZI, M., Berbezier, I., Scarselli, M.a., Castrucci, P., Abbarchi, M., Ronda, A., et al. (2016). Formation of Silicene Nanosheets on Graphite. ACS NANO, 10(12), 11163-11171 [10.1021/acsnano.6b06198].
DE CRESCENZI, M; Berbezier, I; Scarselli, Ma; Castrucci, P; Abbarchi, M; Ronda, A; Jardali, F; Park, J; Vach, H
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/173607
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