Subgab absorption measurements carried out by photothermal deflection spectroscopy in semi-insulating GaAs are used to study the concentration of defects found in as-grown and in heat treated material. Measurements carried out in ion-implanted and furnace-annealed samples prove to be a useful tool for monitoring the successful recovery of the ion implantation damage. © 1991 Springer-Verlag.

Zammit, U., Gasparrini, F., Marinelli, M., Pizzoferrato, R., Scudieri, F., Martellucci, S. (1991). Photothermal deflection spectroscopy study of defects in semi-insulating GaAs. APPLIED PHYSICS. A, SOLIDS AND SURFACES, 52(2), 112-114 [10.1007/BF00323725].

Photothermal deflection spectroscopy study of defects in semi-insulating GaAs

ZAMMIT, UGO;MARINELLI, MASSIMO;PIZZOFERRATO, ROBERTO;SCUDIERI, FOLCO;MARTELLUCCI, SERGIO
1991-01-01

Abstract

Subgab absorption measurements carried out by photothermal deflection spectroscopy in semi-insulating GaAs are used to study the concentration of defects found in as-grown and in heat treated material. Measurements carried out in ion-implanted and furnace-annealed samples prove to be a useful tool for monitoring the successful recovery of the ion implantation damage. © 1991 Springer-Verlag.
1991
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/01 - FISICA SPERIMENTALE
English
Con Impact Factor ISI
Physics and Astronomy (miscellaneous); Materials Science (all); Engineering (all)
Zammit, U., Gasparrini, F., Marinelli, M., Pizzoferrato, R., Scudieri, F., Martellucci, S. (1991). Photothermal deflection spectroscopy study of defects in semi-insulating GaAs. APPLIED PHYSICS. A, SOLIDS AND SURFACES, 52(2), 112-114 [10.1007/BF00323725].
Zammit, U; Gasparrini, F; Marinelli, M; Pizzoferrato, R; Scudieri, F; Martellucci, S
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/131780
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