The photoacoustic technique has been used to characterize ion implanted Si layers, as a function of the implantation conditions of ion dose and energy and of thermal annealing conditions, through the determination of the material thermal conductivity and optical absorption coefficient. It was found that the technique can discriminate between amorphous material obtained under different implantation conditions. Regarding the annealed samples, different results have been obtained for amorphous as-implanted, fine grain polycrystalline, highly defective single crystalline and defect-free single crystalline materials.
Luciani, L., Zammit, U., Marinelli, M., Pizzoferrato, R., Scudieri, F., Martellucci, S. (1989). Photoacoustic monitoring of damage in ion implanted and annealed si layers. APPLIED PHYSICS. A, SOLIDS AND SURFACES, 49(2), 205-209 [10.1007/BF00616300].
Photoacoustic monitoring of damage in ion implanted and annealed si layers
ZAMMIT, UGO;MARINELLI, MASSIMO;PIZZOFERRATO, ROBERTO;SCUDIERI, FOLCO;MARTELLUCCI, SERGIO
1989-01-01
Abstract
The photoacoustic technique has been used to characterize ion implanted Si layers, as a function of the implantation conditions of ion dose and energy and of thermal annealing conditions, through the determination of the material thermal conductivity and optical absorption coefficient. It was found that the technique can discriminate between amorphous material obtained under different implantation conditions. Regarding the annealed samples, different results have been obtained for amorphous as-implanted, fine grain polycrystalline, highly defective single crystalline and defect-free single crystalline materials.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
