Several sets of diamond films have been grown by Microwave Plasma-Enhanced Chemical Vapor Deposition (MWPECVD) using CH4-H2 and CO2-CH4 gas mixtures. The growth conditions were systematically changed in order to obtain different film morphologies, preferential orientations and crystal qualities. In particular, the CH4 concentration in the gas mixture was varied in a wide range to obtain different preferential orientations. Substrate growth temperatures as high as 950°C were used to intentionally obtain highly defective films. The resulting films were characterized by X-Ray Diffraction, Raman spectroscopy and Scanning Electron Microscopy. Cathodoluminescence has been investigated in the energy range 1.55-6.20 eV (200-800 nm). A strong dependence of the 2.85 eV (435 nm) band-A emission on the CH4 concentration is found. Moreover, this dependence does not substantially change with the growth conditions (substrate temperature, nucleation pretreatment, gas mixture etc.). The position of the diamond Raman peak is also correlated with the band-A emission. These results are discussed in terms of crystal defects and diamond film texturing induced by the growth process. © Società Italiana di Fisica.

Marinelli, M., Messina, G., Milani, E., Paoletti, A., Santangelo, S., Tucciarone, A., et al. (1998). Nature of band-A cathodoluminescence in CVD diamond films. IL NUOVO CIMENTO DELLA SOCIETÀ ITALIANA DI FISICA. B, 20(7-9), 1193-1200.

Nature of band-A cathodoluminescence in CVD diamond films

MARINELLI, MARCO;MILANI, ENRICO;PAOLETTI, ANTONIO;TUCCIARONE, ALDO;VERONA RINATI, GIANLUCA
1998-01-01

Abstract

Several sets of diamond films have been grown by Microwave Plasma-Enhanced Chemical Vapor Deposition (MWPECVD) using CH4-H2 and CO2-CH4 gas mixtures. The growth conditions were systematically changed in order to obtain different film morphologies, preferential orientations and crystal qualities. In particular, the CH4 concentration in the gas mixture was varied in a wide range to obtain different preferential orientations. Substrate growth temperatures as high as 950°C were used to intentionally obtain highly defective films. The resulting films were characterized by X-Ray Diffraction, Raman spectroscopy and Scanning Electron Microscopy. Cathodoluminescence has been investigated in the energy range 1.55-6.20 eV (200-800 nm). A strong dependence of the 2.85 eV (435 nm) band-A emission on the CH4 concentration is found. Moreover, this dependence does not substantially change with the growth conditions (substrate temperature, nucleation pretreatment, gas mixture etc.). The position of the diamond Raman peak is also correlated with the band-A emission. These results are discussed in terms of crystal defects and diamond film texturing induced by the growth process. © Società Italiana di Fisica.
1998
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/01 - FISICA SPERIMENTALE
English
http://www.scopus.com/inward/record.url?eid=2-s2.0-0346320130&partnerID=40&md5=13a1f6cf0ec1d5652746f1e70b61582a
Marinelli, M., Messina, G., Milani, E., Paoletti, A., Santangelo, S., Tucciarone, A., et al. (1998). Nature of band-A cathodoluminescence in CVD diamond films. IL NUOVO CIMENTO DELLA SOCIETÀ ITALIANA DI FISICA. B, 20(7-9), 1193-1200.
Marinelli, M; Messina, G; Milani, E; Paoletti, A; Santangelo, S; Tucciarone, A; VERONA RINATI, G
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/131110
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